SUP90N08-8M2P datasheet(1/6 Pages) VISHAY

Part #	SUP90N08-8M2P

Description	N-Channel 75-V (D-S) MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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Vishay Siliconix

SUP90N08-8m2P

Document Number: 69615

S-72504-Rev. A, 03-Dec-07

www.vishay.com

1

N-Channel 75-V (D-S) MOSFET

FEATURES

•

TrenchFET® Power MOSFET

•

175 °C Junction Temperature

•

100 % Rg and UIS Tested

APPLICATIONS

•

Power Supply

- Secondary Synchronous Rectification

•

Industrial

PRODUCT SUMMARY

V(BR)DSS (V)

rDS(on) (Ω)ID (A)

Qg (Typ)

75

0.0082 at VGS = 10 V

90d

58

TO-220AB

Top View

GD S

Ordering Information: SUP90N08-8m2P-E3 (Lead (Pb)-free)

N-Channel MOSFET

G

D

S

Notes:

a. Duty cycle

≤ 1 %.

b. See SOA curve for voltage derating.

c. When Mounted on 1" square PCB (FR-4 material).

d. Package limited.

ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

75

V

Gate-Source Voltage

VGS

± 20

Continuous Drain Current (TJ = 175 °C)

TC = 25 °C

ID

90d

A

TC = 70 °C

79d

Pulsed Drain Current

IDM

200

Avalanche Current

IAS

50

Single Avalanche Energya

L = 0.1 mH

EAS

125

mJ

Maximum Power Dissipationa

TC = 25 °C

PD

150b

W

TA = 25 °C

c

3.75

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 175

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Limit

Unit

Junction-to-Ambient (PCB Mount)c

RthJA

40

°C/W

Junction-to-Case (Drain)

RthJC

1

RoHS

COMPLIANT

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