SUP90N03-03 datasheet(1/6 Pages) VISHAY

Part #	SUP90N03-03

Description	N-Channel 30-V (D-S) MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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Vishay Siliconix

SUP90N03-03

New Product

Document Number: 74341

S-70303-Rev. A, 12-Feb-07

www.vishay.com

1

N-Channel 30-V (D-S) MOSFET

FEATURES

•

TrenchFET® Power MOSFET

•

100 % Rg and UIS Tested

APPLICATIONS

•

OR-ing

•

Server

•

DC/DC

PRODUCT SUMMARY

VDS (V)

rDS(on) (Ω)

ID (A)

a, e

Qg (Typ)

30

0.0029 at VGS = 10 V

90

82 nC

0.0033 at VGS = 4.5 V

90

TO-220AB

Top View

GD S

DRAIN connected to TAB

Ordering Information: SUP90N03-03-E3 (Lead (Pb)-free)

N-Channel MOSFET

G

D

S

Notes:

a. Based on TC = 25 °C.

b. Surface Mounted on 1" x 1" FR4 board.

c. t = 10 sec.

d. Maximum under Steady State conditions is 90 °C/W.

e. Calculated based on maximum junction temperature. Package limitation current is 90 A.

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

30

V

Gate-Source Voltage

VGS

± 20

Continuous Drain Current (TJ = 175 °C)

TC = 25 °C

ID

90a, e

A

TC = 70 °C

90e

TA = 25 °C

28.8b, c

TA = 70 °C

27b, c

Pulsed Drain Current

IDM

90

Avalanche Current Pulse

L = 0.1 mH

IAS

36

Single Pulse Avalanche Energy

EAS

64.8

V

Continuous Source-Drain Diode Current

TC = 25 °C

IS

90a, e

A

TA = 25 °C

3.13b, c

Maximum Power Dissipation

TC = 25 °C

PD

187a

W

TC = 70 °C

131

TA = 25 °C

3.75b, c

TA = 70 °C

2.63b, c

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 175

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambientb, d

t

≤ 10 sec

RthJA

32

40

°C/W

Maximum Junction-to-Case

Steady State

RthJC

0.5

0.6

RoHS

COMPLIANT

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