SUP57N20-33-E3 datasheet(3/6 Pages) VISHAY

Part #	SUP57N20-33-E3

Description	N-Channel 200-V (D-S) 175 °C MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

Direct Link	http://www.vishay.com

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3 / 6 page

Document Number: 72100

S-71662-Rev. B, 06-Aug-07

www.vishay.com

3

Vishay Siliconix

SUP57N20-33

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Output Characteristics

Transconductance

Capacitance

0

20

40

60

80

100

120

140

0

2468

10

VDS - Drain-to-Source Voltage (V)

VGS = 10 thru 7 V

4 V

6 V

5 V

0

30

60

90

120

150

180

0

20

40

60

80

100

120

TC = - 55 °C

25 °C

125 °C

ID - Drain Current (A)

0

1000

2000

3000

4000

5000

6000

7000

0

25

50

75

100

125

150

VDS - Drain-to-Source Voltage (V)

Ciss

Coss

Crss

Transfer Characteristics

On-Resistance vs. Drain Current

Gate Charge

0

20

40

60

80

100

120

140

012

34

567

VGS - Gate-to-Source Voltage (V)

25 °C

- 55 °C

TC = 125 °C

0.000

0.015

0.030

0.045

0.060

0

20

40

60

80

100

120

ID - Drain Current (A)

VGS = 10 V

0

4

8

12

16

20

0

25

50

75

100

125

150

Qg - Total Gate Charge (nC)

VDS = 100 V

ID = 65 A

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SUP57N20-33-E3 Datasheet(PDF) 3 Page - Vishay Siliconix

SUP57N20-33-E3 Datasheet(HTML) 3 Page - Vishay Siliconix

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