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SFH6916 Datasheet(PDF) 1 Page - Vishay Siliconix

Part No. SFH6916
Description  Optocoupler, Phototransistor Output, Quad Channel, SOP-16, Half Pitch Mini-Flat Package
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Maker  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SFH6916 Datasheet(HTML) 1 Page - Vishay Siliconix

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Document Number: 83687
For technical questions, contact: optocoupler.answers@vishay.com
www.vishay.com
Rev. 1.8, 16-May-08
755
Optocoupler, Phototransistor Output,
Quad Channel, SOP-16, Half Pitch Mini-Flat Package
SFH6916
Vishay Semiconductors
DESCRIPTION
The SFH6916 has a GaAs infrared emitter, which is optically
coupled to a silicon planar phototransistor detector, and is
incorporated in a 16 pin 50 mil lead pitch miniflat package. It
features
a
high
current transfer ratio, low coupling
capacitance, and high isolation voltage.
The coupling devices are designed for signal transmission
between two electrically separated circuits.
FEATURES
• SOP (small outline package)
• Isolation test voltage, 3750 VRMS (1.0 s)
• High collector emitter voltage, VCEO = 70 V
• Low saturation voltage
• Fast switching times
• Temperature stable
• Low coupling capacitance
• End stackable, 0.050" (1.27 mm) spacing
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC and
WEEE 2002/96/EC
AGENCY APPROVALS
• UL1577, file no. E52744 system code U
• DIN EN 60747-5-5 available with option 1
i179076
1
2
E
C
A
C
15
16
3
4
E
C
A
C
13
14
5
6
E
C
A
C
11
12
7
8
E
C
A
C
9
10
ORDER INFORMATION
PART
REMARKS
SFH6916
CTR 50 to 300 %, SOP-16
ABSOLUTE MAXIMUM RATINGS (1)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
INPUT
Reverse voltage
VR
6.0
V
DC forward current
IF
50
mA
Surge forward current
tp ≤ 10 µs
IFSM
2.5
A
Total power dissipation
Pdiss
80
mW
OUTPUT
Collector emitter voltage
VCE
70
V
Emitter collector voltage
VEC
7.0
V
Collector current
IC
50
mA
tp = 1.0 ms
IC
100
mA
Total power dissipation per channel
Pdiss
150
mW
COUPLER
Isolation test voltage between emitter
and detector (1.0 s)
VISO
3750
VRMS
Isolation resistance
VIO = 500 V, Tamb = 25 °C
RIO
≥ 1012
Ω
VIO = 500 V, Tamb = 100 °C
RIO
≥ 1011
Ω
Storage temperature range
Tstg
- 55 to + 125
°C


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