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SD823C20S20C Datasheet(PDF) 9 Page - Vishay Siliconix |
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SD823C20S20C Datasheet(HTML) 9 Page - Vishay Siliconix |
9 / 11 page Document Number: 93181 For technical questions, contact: ind-modules@vishay.com www.vishay.com Revision: 14-May-08 9 SD823C..C Series Fast Recovery Diodes (Hockey PUK Version), 810/910 A Vishay High Power Products Fig. 34 - Maximum Total Energy Loss Per Pulse Characteristics Fig. 35 - Frequency Characteristics Fig. 36 - Maximum Total Energy Loss Per Pulse Characteristics Fig. 37 - Frequency Characteristics Fig. 38 - Maximum Total Energy Loss Per Pulse Characteristics Fig. 39 - Frequency Characteristics 1E2 1E3 1E4 1E1 1E2 1E3 1E4 1 2 Pulse Basewidth (µs) 10 joulesp er p ulse 6 4 d v/ d t = 1000V/ µs Sinusoid al Pulse T = 150°C, V = 800V J RRM 0.6 0.4 0.2 0.1 SD823C..S30C Series tp 1E2 1E3 1E4 1E1 1E2 1E3 1E4 Pulse Basewidth (µs) 50 Hz 200 10000 100 4000 dv/ d t = 1000V/ us 20000 400 15000 1000 2000 6000 T = 55°C, V = 800V C RRM SD823C..S30C Series Sinusoidal Pulse tp 3000 1E2 1E3 1E4 1E11E2 1E31E4 1 2 Pulse Basewidth (µs) 4 10 joules p er pulse 6 dv/ d t = 1000V/ µs di/ d t = 300A/ µs T = 150°C, V = 800V 0.6 0.4 J RRM SD823C..S30C Series Trapezoida l Pulse tp 0.8 1E2 1E3 1E4 1E1 1E2 1E3 1E4 Pulse Basewidth (µs) Trapezoidal Pulse 50 Hz 100 200 400 1000 1500 2000 4000 3000 600 6000 10000 15000 T = 55°C, V = 800V dv/ d t = 1000V/ us, di/ d t = 300A/ us C RRM SD823C..S30C Series tp 1E2 1E3 1E4 1E1 1E2 1E3 1E4 1 2 Pulse Basewidth (µs) 4 10 joules per pulse 6 Trapezoidal Pulse 0.6 0.4 T = 150°C, V = 800V dv/ d t = 1000V/ µs di/ d t = 100A/ µs J RRM SD823C..S30C Series tp 1E2 1E3 1E4 1E1 1E2 1E3 1E4 Pulse Basewidth (µs) 50 Hz 200 10000 100 4000 dv/ d t = 1000V/ us 20000 400 15000 1000 2000 6000 T = 55°C, V = 800V C RRM SD823C..S30C Series Sinusoidal Pulse tp 3000 |
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