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SS8P2CL Datasheet(PDF) 3 Page - Vishay Siliconix

Part No. SS8P2CL
Description  High Current Density Surface Mount Schottky Barrier Rectifiers
Download  5 Pages
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Maker  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
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SS8P2CL Datasheet(HTML) 3 Page - Vishay Siliconix

   
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New Product
SS8P2CL & SS8P3CL
Vishay General Semiconductor
Document Number: 89030
Revision: 30-Jul-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
Figure 1. Maximum Forward Current Derating Curve
Figure 2. Forward Power Loss Characteristics Per Diode
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
0
2
4
6
8
10
0
25
50
75
100
125
150
175
Lead Temperature (°C)
Resistive or Inductive Load
T
L measured
at the Cathode Band Terminal
0
0.8
0.4
1.2
1.6
2.0
2.4
01
2
3
4
5
Average Forward Current (A)
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 0.8
D = 1.0
D = t
p/T
t
p
T
0.01
0.1
1
10
100
0.2
0.1
0.3
0
0.4
0.5
0.6
0.7
0.8
Instantaneous Forward Voltage (V)
T
A = 150 °C
T
A = 125 °C
T
A = 25 °C
Figure 4. Typical Reverse Leakage Characteristics Per Diode
Figure 5. Typical Junction Capacitance Per Diode
Figure 6. Typical Transient Thermal Impedance Per Diode
0.001
0.01
0.1
1
10
100
10
20
30
40
60
50
70
90
80
100
Percent of Rated Peak Reverse Voltage (%)
T
A = 150 °C
T
A = 125 °C
T
A = 25 °C
100
1000
0.1
1
10
100
Reverse Voltage (V)
T
J = 25 °C
f = 1.0 MHz
V
sig = 50 mVp-p
0.01
0.1
1
10
100
1
10
100
t - Pulse Duration (s)
Junction to Ambient


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