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SUD50P04-09L Datasheet(PDF) 2 Page - Vishay Siliconix |
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SUD50P04-09L Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 5 page www.vishay.com 2 Document Number: 72243 S-71660-Rev. B, 06-Aug-07 Vishay Siliconix SUD50P04-09L New Product Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min Typ Max Unit Static Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = - 250 µA - 40 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 1 - 3 Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = - 32 V, VGS = 0 V - 1 µA VDS = - 32 V, VGS = 0 V, TJ = 125 °C - 50 VDS = - 32 V, VGS = 0 V, TJ = 175 °C - 150 On-State Drain Currenta ID(on) VDS = - 5 V, VGS = - 10 V - 50 A Drain-Source On-State Resistancea rDS(on) VGS = - 10 V, ID = - 24 A 0.0075 0.0094 Ω VGS = - 10 V, ID = - 50 A, TJ = 125 °C 0.014 VGS = - 10 V, ID = - 50 A, TJ = 175 °C 0.017 VGS = - 4.5 V, ID = - 18 A 0.0115 0.0145 Forward Transconductancea gfs VDS = - 5 V, ID = - 24 A 73 S Dynamicb Input Capacitance Ciss VGS = 0 V, VDS = - 25 V, f = 1 MHz 4800 pF Output Capacitance Coss 700 Reverse Transfer Capacitance Crss 550 Total Gate Chargec Qg VDS = - 20 V, VGS = - 10 V, ID = - 50 A 102 150 nC Gate-Source Chargec Qgs 18.5 Gate-Drain Chargec Qgd 27 Turn-On Delay Timec td(on) VDD = - 20 V, RL = 0.4 Ω ID ≅ - 50 A, VGEN = - 10 V, RG = 6 Ω 10 15 ns Rise Timec tr 60 90 Turn-Off Delay Timec td(off) 145 220 Fall Timec tf 140 220 Source-Drain Diode Ratings and Characteristics (TC = 25 °C) b Continuous Current IS - 50 A Pulsed Current ISM - 100 Forward Voltagea VSD IF = - 50 A, VGS = 0 V - 1.0 - 1.5 V Reverse Recovery Time trr IF = - 50 A, di/dt = 100 A/µs 55 85 ns |
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