SUD50P04-09L datasheet(2/5 Pages) VISHAY

Part #	SUD50P04-09L

Description	P-Channel 40-V (D-S), 175 °C MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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Document Number: 72243

S-71660-Rev. B, 06-Aug-07

Vishay Siliconix

SUD50P04-09L

New Product

Notes:

a. Pulse test; pulse width

≤ 300 µs, duty cycle ≤ 2 %.

b. Guaranteed by design, not subject to production testing.

c. Independent of operating temperature.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Static

Drain-Source Breakdown Voltage

V(BR)DSS

VGS = 0 V, ID = - 250 µA

- 40

V

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = - 250 µA

- 1

- 3

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = ± 20 V

± 100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = - 32 V, VGS = 0 V

- 1

µA

VDS = - 32 V, VGS = 0 V, TJ = 125 °C

- 50

VDS = - 32 V, VGS = 0 V, TJ = 175 °C

- 150

On-State Drain Currenta

ID(on)

VDS = - 5 V, VGS = - 10 V

- 50

A

Drain-Source On-State Resistancea

rDS(on)

VGS = - 10 V, ID = - 24 A

0.0075

0.0094

Ω

VGS = - 10 V, ID = - 50 A, TJ = 125 °C

0.014

VGS = - 10 V, ID = - 50 A, TJ = 175 °C

0.017

VGS = - 4.5 V, ID = - 18 A

0.0115

0.0145

Forward Transconductancea

gfs

VDS = - 5 V, ID = - 24 A

73

S

Dynamicb

Input Capacitance

Ciss

VGS = 0 V, VDS = - 25 V, f = 1 MHz

4800

pF

Output Capacitance

Coss

700

Reverse Transfer Capacitance

Crss

550

Total Gate Chargec

Qg

VDS = - 20 V, VGS = - 10 V, ID = - 50 A

102

150

nC

Gate-Source Chargec

Qgs

18.5

Gate-Drain Chargec

Qgd

27

Turn-On Delay Timec

td(on)

VDD = - 20 V, RL = 0.4 Ω

ID ≅ - 50 A, VGEN = - 10 V, RG = 6 Ω

10

15

ns

Rise Timec

tr

60

90

Turn-Off Delay Timec

td(off)

145

220

Fall Timec

tf

140

220

Source-Drain Diode Ratings and Characteristics (TC = 25 °C)

b

Continuous Current

IS

- 50

A

Pulsed Current

ISM

- 100

Forward Voltagea

VSD

IF = - 50 A, VGS = 0 V

- 1.0

- 1.5

V

Reverse Recovery Time

trr

IF = - 50 A, di/dt = 100 A/µs

55

85

ns

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