SUD50NP04-77P datasheet(1/12 Pages) VISHAY

Part #	SUD50NP04-77P

Description	Complementary N- and P-Channel 40-V (D-S) MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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Vishay Siliconix

SUD50NP04-77P

New Product

Document Number: 73989

S-80109-Rev. B, 21-Jan-08

www.vishay.com

1

Complementary N- and P-Channel 40-V (D-S) MOSFET

FEATURES

•

TrenchFET® Power MOSFET

•

100 % UIS Tested

APPLICATIONS

•

Backlight Inverter for LCD Display

•

Full Bridge DC/DC Converter

PRODUCT SUMMARY

VDS (V)

rDS(on) (Ω)

ID (A)

a

Qg (Typ.)

N-Channel

40

0.037 at VGS = 10 V

8

26

0.046 at VGS = 4.5 V

8

P-Channel

- 40

0.040 at VGS = - 10 V

- 8

25.5

0.050 at VGS = - 4.5 V

- 8

S1 G1

S2 G2

TO-252-4L

D-PAK

Top View

Drain Connected to

Tab

D

Ordering Information: SUD50NP04-77P-T4-E3 (Lead (Pb)-free)

N-Channel MOSFET

P-Channel MOSFET

G1

S1

G2

S2

D

Notes:

a. Package Limited.

b. Surface Mounted on 1" x 1" FR4 Board.

c. t = 10 s.

d. Maximum under Steady State conditions is 60 °C/W (N-Channel) and 52 °C/W (P-Channel).

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter

Symbol

N-Channel

P-Channel

Unit

Drain-Source Voltage

VDS

40

- 40

V

Gate-Source Voltage

VGS

± 20

Continuous Drain Current (TJ = 150 °C)

TC = 25 °C

ID

8a

- 8a

A

TC = 70 °C

8a

- 8a

TA = 25 °C

8a, b, c

- 8a, b, c

TA = 70 °C

7b, c

- 7.4b, c

Pulsed Drain Current (10 µs Pulse Width)

IDM

30

- 30

Source-Drain Current Diode Current

TC = 25 °C

IS

8a

- 8a

TA = 25 °C

4.3b, c

- 4.6b, c

Pulsed Source-Drain Current

ISM

30

- 30

Single Pulse Avalanche Current

L = 0.1 mH

IAS

715

Single Pulse Avalanche Energy

EAS

2.45

11.25

mJ

Maximum Power Dissipation

TC = 25 °C

PD

10.8

24

W

TC = 70 °C

6.9

15.3

TA = 25 °C

5.2b, c

5.6b, c

TA = 70 °C

3.3b, c

3.6b, c

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

N-Channel

P-Channel

Unit

Typ.

Max.

Typ.

Max.

Maximum Junction-to-Ambientb, d

t

≤ 10 s

RthJA

20

24

18

22

°C/W

Maximum Junction-to-Case (Drain)

Steady State

RthJC

9.4

11.5

4.3

5.2

RoHS

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