New Product

SS1P3 & SS1P4

Vishay General Semiconductor

Document Number: 88935

Revision: 19-May-08

For technical questions within your region, please contact one of the following:

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

www.vishay.com

1

High Current Density Surface Mount

Schottky Barrier Rectifiers

FEATURES

• Very low profile - typical height of 1.0 mm

• Ideal for automated placement

• Low forward voltage drop, low power

losses

• High efficiency

• Low thermal resistance

• Meets MSL level 1, per J-STD-020, LF maximum

peak of 260 °C

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

TYPICAL APPLICATIONS

For use in low voltage high frequency inverters,

freewheeling,

dc-to-dc

converters,

and

polarity

protection applications.

(Note: These devices are not Q101 qualified.)

MECHANICAL DATA

Case: DO-220AA (SMP)

Epoxy meets UL 94V-0 flammability rating

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD22-B102

E3 suffix for consumer grade, meets JESD 201 class

1A whisker test

Polarity: Color band denotes the cathode end

PRIMARY CHARACTERISTICS

1 A

30 V, 40 V

30 A

10 mJ

0.40 V, 0.45 V

150 °C

DO-220AA (SMP)

Notes:

(1) Pulse test: 300 µs pulse width, 1 % duty cycle

(2) Pulse test: Pulse width

≤ 40 ms

PARAMETER

SYMBOL

SS1P3

SS1P4

UNIT

Device marking code

13

14

Maximum repetitive peak reverse voltage

30

40

V

Maximum average forward rectified current (Fig. 1)

1.0

A

Peak forward surge current 10 ms single half sine-wave superimposed

on rated load

30

A

10

mJ

dV/dt

10 000

V/µs

Operating junction and storage temperature range

- 55 to + 150

°C

PARAMETER

TEST CONDITIONS

SYMBOL

SS1P3

SS1P4

UNIT

Maximum instantaneous

0.50

0.40

0.53

0.45

V

(2)

150

15

µA

mA

Typical junction capacitance

4.0 V, 1 MHz

70

pF