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SS1P3 Datasheet(PDF) 1 Page - Vishay Siliconix |
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SS1P3 Datasheet(HTML) 1 Page - Vishay Siliconix |
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New Product SS1P3 & SS1P4 Vishay General Semiconductor Document Number: 88935 Revision: 19-May-08 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 1 High Current Density Surface Mount Schottky Barrier Rectifiers FEATURES • Very low profile - typical height of 1.0 mm • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency • Low thermal resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS For use in low voltage high frequency inverters, freewheeling, dc-to-dc converters, and polarity protection applications. (Note: These devices are not Q101 qualified.) MECHANICAL DATA Case: DO-220AA (SMP) Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix for consumer grade, meets JESD 201 class 1A whisker test Polarity: Color band denotes the cathode end PRIMARY CHARACTERISTICS IF(AV) 1 A VRRM 30 V, 40 V IFSM 30 A EAS 10 mJ VF 0.40 V, 0.45 V TJ max. 150 °C DO-220AA (SMP) eSMPTM Series Notes: (1) Pulse test: 300 µs pulse width, 1 % duty cycle (2) Pulse test: Pulse width ≤ 40 ms MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL SS1P3 SS1P4 UNIT Device marking code 13 14 Maximum repetitive peak reverse voltage VRRM 30 40 V Maximum average forward rectified current (Fig. 1) IF(AV) 1.0 A Peak forward surge current 10 ms single half sine-wave superimposed on rated load IFSM 30 A Non-repetitive avalanche energy at IAS = 1.5 A, L = 10 mH, TJ = 25 °C EAS 10 mJ Voltage rate of change (rated VR) dV/dt 10 000 V/µs Operating junction and storage temperature range TJ, TSTG - 55 to + 150 °C ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL SS1P3 SS1P4 UNIT Maximum instantaneous forward voltage (1) IF = 1.0 A IF = 1.0 A TJ = 25 °C TJ = 125 °C VF 0.50 0.40 0.53 0.45 V Maximum reverse current at rated VR (2) TJ = 25 °C TJ = 125 °C IR 150 15 µA mA Typical junction capacitance 4.0 V, 1 MHz CJ 70 pF |
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