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SS1P3 Datasheet(PDF) 1 Page - Vishay Siliconix

Part No. SS1P3
Description  High Current Density Surface Mount Schottky Barrier Rectifiers
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Maker  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
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SS1P3 Datasheet(HTML) 1 Page - Vishay Siliconix

   
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New Product
SS1P3 & SS1P4
Vishay General Semiconductor
Document Number: 88935
Revision: 19-May-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
High Current Density Surface Mount
Schottky Barrier Rectifiers
FEATURES
• Very low profile - typical height of 1.0 mm
• Ideal for automated placement
• Low forward voltage drop, low power
losses
• High efficiency
• Low thermal resistance
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in low voltage high frequency inverters,
freewheeling,
dc-to-dc
converters,
and
polarity
protection applications.
(Note: These devices are not Q101 qualified.)
MECHANICAL DATA
Case: DO-220AA (SMP)
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test
Polarity: Color band denotes the cathode end
PRIMARY CHARACTERISTICS
IF(AV)
1 A
VRRM
30 V, 40 V
IFSM
30 A
EAS
10 mJ
VF
0.40 V, 0.45 V
TJ max.
150 °C
DO-220AA (SMP)
eSMPTM Series
Notes:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width
≤ 40 ms
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
SS1P3
SS1P4
UNIT
Device marking code
13
14
Maximum repetitive peak reverse voltage
VRRM
30
40
V
Maximum average forward rectified current (Fig. 1)
IF(AV)
1.0
A
Peak forward surge current 10 ms single half sine-wave superimposed
on rated load
IFSM
30
A
Non-repetitive avalanche energy at IAS = 1.5 A, L = 10 mH, TJ = 25 °C
EAS
10
mJ
Voltage rate of change (rated VR)
dV/dt
10 000
V/µs
Operating junction and storage temperature range
TJ, TSTG
- 55 to + 150
°C
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
SS1P3
SS1P4
UNIT
Maximum instantaneous
forward voltage (1)
IF = 1.0 A
IF = 1.0 A
TJ = 25 °C
TJ = 125 °C
VF
0.50
0.40
0.53
0.45
V
Maximum reverse current at rated VR
(2)
TJ = 25 °C
TJ = 125 °C
IR
150
15
µA
mA
Typical junction capacitance
4.0 V, 1 MHz
CJ
70
pF


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