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TLMS1001-GS08 Datasheet(PDF) 2 Page - Vishay Siliconix |
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TLMS1001-GS08 Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 11 page www.vishay.com 2 Document Number 83172 Rev. 1.6, 15-Oct-08 Vishay Semiconductors TLMO1000, TLMS1000, TLMS1001, TLMY1000 For technical support, please contact: LED@vishay.com Note: 1) T amb = 25 °C, unless otherwise specified 2) Driving the LED in reverse direction is suitable for short term application Note: 1) T amb = 25 °C, unless otherwise specified Note: 1) T amb = 25 °C, unless otherwise specified ABSOLUTE MAXIMUM RATINGS 1) TLMS100., TLMO1000, TLMY1000 PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage 2) VR 12 V DC Forward current Tamb ≤ 95 °C IF 15 mA Surge forward current tp ≤ 10 µs IFSM 0.1 A Power dissipation PV 40 mW Junction temperature Tj 120 °C Operating temperature range Tamb - 40 to + 100 °C Storage temperature range Tstg - 40 to + 100 °C Soldering temperature acc. Vishay spec Tsd 260 °C Thermal resistance junction/ ambient mounted on PC board (pad size > 5 mm2) RthJA 500 K/W OPTICAL AND ELECTRICAL CHARACTERISTICS 1) TLMS100., RED PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT Luminous intensity IF = 2 mA TLMS1000 IV 1.8 4 mcd TLMS1001 IV 4.5 9 mcd Dominant wavelength IF = 2 mA λ d 624 628 636 nm Peak wavelength IF = 2 mA λ p 640 nm Angle of half intensity IF = 2 mA ϕ ± 80 deg Forward voltage IF = 2 mA VF 1.8 2.6 V Reverse voltage IR = 10 µA VR 6V Junction capacitance VR = 0, f = 1 MHz Cj 15 pF OPTICAL AND ELECTRICAL CHARACTERISTICS 1) TLMO1000, SOFT ORANGE PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Luminous intensity IF = 2 mA IV 3.55 7.5 mcd Dominant wavelength IF = 2 mA λ d 600 605 609 nm Peak wavelength IF = 2 mA λ p 610 nm Angle of half intensity IF = 2 mA ϕ ± 80 deg Forward voltage IF = 2 mA VF 1.8 2.6 V Reverse voltage IR = 10 µA VR 6V Junction capacitance VR = 0, f = 1 MHz Cj 15 pF |
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