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TSUS4400 Datasheet(PDF) 2 Page - Vishay Siliconix |
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TSUS4400 Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 5 page Document Number: 81054 For technical questions, contact: emittertechsupport@vishay.com www.vishay.com Rev. 1.6, 05-Sep-08 277 TSUS4400 Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs Vishay Semiconductors Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature Note Tamb = 25 °C, unless otherwise specified 0 20 40 60 80 100 120 140 160 180 010 20 30 40 50 60 70 80 90 100 21315 T amb - Ambient Temperature (°C) R thJA = 300 K/W 0 20 40 60 80 100 120 0 10 203040 506070 80 90 100 T amb - Ambient Temperature (°C) 21316 R thJA = 300 K/W BASIC CHARACTERISTICS PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Forward voltage IF = 100 mA, tp = 20 ms VF 1.3 1.7 V IF = 1.5 A, tp = 100 µs VF 2.2 V Temperature coefficient of VF IF = 100 mA TKVF - 1.3 mV/K Reverse current VR = 5 V IR 100 µA Breakdown voltage IR = 100 µA V(BR) 540 µA Junction capacitance VR = 0 V, f = 1 MHz, E = 0 Cj 30 pF Radiant intensity IF = 100 mA, tp = 20 ms Ie 715 35 mW/sr IF = 1.5 A, tp = 100 µs Ie 140 mW/sr Radiant power IF = 100 mA, tp = 20 ms φ e 20 mW Temperature coefficient of φ e IF = 20 mA TK φ e - 0.8 %/K Angle of half intensity ϕ ± 18 deg Peak wavelength IF = 100 mA λ p 950 nm Spectral bandwidth IF = 100 mA Δλ 50 nm Temperature coefficient of λ p IF = 100 mA TK λ p 0.2 nm/K Rise time IF = 100 mA tr 800 ns IF = 1.5 A tr 400 ns Fall time IF = 100 mA tf 800 ns IF = 1.5 A tf 400 ns Virtual source diameter d 2.1 mm |
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