Document Number: 81832

For technical questions, contact: emittertechsupport@vishay.com

www.vishay.com

Rev. 1.1, 04-Sep-08

187

High Speed Infrared Emitting Diode, RoHS Compliant, 890 nm,

GaAlAs Double Hetero

TSHF6410

Vishay Semiconductors

DESCRIPTION

TSHF6410 is an infrared, 890 nm emitting diode in GaAlAs

double hetero (DH) technology with high radiant power and

high speed, molded in a clear, untinted plastic package.

FEATURES

• Package type: leaded

• Package form: T-1¾

• Dimensions (in mm):

∅ 5

• Peak wavelength:

λ

• High reliability

• High radiant power

• High radiant intensity

• Angle of half intensity:

ϕ = ± 22°

• Low forward voltage

• Suitable for high pulse current operation

• Good spectral matching with Si photodetectors

• Lead

(Pb)-free

component

in

accordance

with

RoHS 2002/95/EC and WEEE 2002/96/EC

APPLICATIONS

• Infrared high speed remote control and free air data

transmission systems with high modulation frequencies or

high data transmission rate requirements

• Transmission systems according to IrDA requirements and

for carrier frequency based systems (e.g. ASK/FSK -

coded, 450 kHz or 1.3 MHz)

Note

Test conditions see table “Basic Characteristics”

Note

MOQ: minimum order quantity

94 8389

PRODUCT SUMMARY

COMPONENT

ϕ (deg)

λ

TSHF6410

70

± 22

890

30

ORDERING INFORMATION

ORDERING CODE

PACKAGING

REMARKS

PACKAGE FORM

TSHF6410

Bulk

MOQ: 4000 pcs, 4000 pcs/bulk

T-1¾

ABSOLUTE MAXIMUM RATINGS

PARAMETER

TEST CONDITION

SYMBOL

VALUE

UNIT

Reverse voltage

5V

Forward current

100

mA

Peak forward current

200

mA

Surge forward current

1.5

A

Power dissipation

160

mW