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Document Number: 83503

812

Rev. 2.2, 16-May-08

TCET1100/TCET1100G

Vishay Semiconductors

Optocoupler, Phototransistor Output,

High Temperarure

Notes

temperatures at each node for a given operating condition. The thermal resistance from board to ambient will be dependent on the type of

PCB, layout and thickness of copper traces. For a detailed explanation of the thermal model, please reference Vishay's Thermal

Characteristics of Optocouplers Application note.

Note

Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering

evaluation. Typical values are for information only and are not part of the testing requirements.

PARAMETER

TEST CONDITION

SYMBOL

VALUE

UNIT

LED power dissipation

at 25 °C

100

mW

Output power dissipation

at 25 °C

150

mW

Maximum LED junction temperature

125

°C

Maximum output die junction temperature

125

°C

Thermal resistance, junction emitter to board

θ

EB

173

°C/W

Thermal resistance, junction emitter to case

θ

EC

149

°C/W

Thermal resistance, junction detector to board

θ

DB

111

°C/W

Thermal resistance, junction detector to case

θ

DC

127

°C/W

Thermal resistance, junction emitter to junction detector

θ

ED

173

°C/W

θ

BA

197

°C/W

θ

CA

4041

°C/W

ELECTRICAL CHARACTERISTICS

PARAMETER

TEST CONDITION

SYMBOL

MIN.

TYP.

MAX.

UNIT

INPUT

Forward voltage

1.25

1.6

V

Junction capacitance

50

pF

OUTPUT

Collector emitter voltage

70

V

Emitter collector voltage

7V

Collector emitter cut-off current

10

100

nA

COUPLER

Collector emitter saturation voltage

0.3

V

Cut-off frequency

110

kHz

Coupling capacitance

f = 1 MHz

0.3

pF

T

A

θ

CA

T

C

T

JD

T

JE

T

B

θ

EC

θ

EB

θ

DC

θ

DB

θ

BA

θ

DE

T

A

19996

Package