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TCET2600 Datasheet(PDF) 2 Page - Vishay Siliconix

Part No. TCET2600
Description  Optocoupler, Phototransistor Output, AC Input (Dual, Quad Channel)
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Maker  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

TCET2600 Datasheet(HTML) 2 Page - Vishay Siliconix

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For technical questions, contact: optocoupler.answers@vishay.com
Document Number: 83726
2
Rev. 1.5, 07-Dec-07
TCET2600/TCET4600
Vishay Semiconductors
Optocoupler, Phototransistor Output,
AC Input (Dual, Quad Channel)
Notes
(1) Tamb = 25 °C, unless otherwise specified.
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum
Rating for extended periods of the time can adversely affect reliability.
(2) Refer to wave profile for soldering conditions for through hole devices.
Note
Tamb = 25 °C, unless otherwise specified.
Minimum and maximum values were tested requierements. Typical values are characteristics of the device and are the result of engineering
evaluations. Typical values are for information only and are not part of the testing requirements.
ABSOLUTE MAXIMUM RATINGS (1)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
INPUT
Reverse voltage
VR
6V
Forward current
IF
± 60
mA
Forward surge current
tp ≤ 10 µs
IFSM
± 1.5
A
Power dissipation
Pdiss
100
mW
Junction temperature
Tj
125
°C
OUTPUT
Collector emitter voltage
VCEO
70
V
Emitter collector voltage
VECO
7V
Collector current
IC
50
mA
Collector peak current
tp/T = 0.5, tp ≤ 10 ms
ICM
100
mA
Power dissipation
Pdiss
150
mW
Junction temperature
Tj
125
°C
COUPLER
Isolation test voltage (RMS)
t = 1 min
VISO
5000
VRMS
Total power dissipation
Ptot
250
mW
Operating ambient temperature range
Tamb
- 40 to + 100
°C
Storage temperature range
Tstg
- 55 to + 125
°C
Soldering temperature (2)
2 mm from case, t
≤ 10 s
Tsld
260
°C
ELECTRICAL CHARACTERISTCS
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
INPUT
Forward voltage
IF = ± 50 mA
VF
1.25
1.6
V
Junction capacitance
VR = 0 V, f = 1 MHz
Cj
50
pF
OUTPUT
Collector emitter voltage
IC = 100 µA
VCEO
70
V
Emitter collector voltage
IE = 100 µA
VECO
7V
Collector dark current
VCE = 20 V, IF = 0 A,
E = 0
ICEO
100
nA
COUPLER
Collector emitter saturation voltage
IF = 10 mA, IC = 1 mA
VCEsat
0.3
V
Cut-off frequency
VCE = 5 V, IF = 10 mA,
RL = 100 Ω
fc
100
kHz
Coupling capacitance
f = 1 MHz
Ck
0.3
pF
CURRENT TRANSFER RATIO
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
IC/IF
VCE = 5 V, IF = ± 5 mA
CTR
20
300
%


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