SI5858DU-T1-GE3 datasheet(4/10 Pages) VISHAY

Part #	SI5858DU-T1-GE3

Description	N-Channel 20-V (D-S) MOSFET with Schottky Diode

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Manufacturer	VISHAY [Vishay Siliconix]

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Document Number: 73460

S-81449-Rev. B, 23-Jun-08

Vishay Siliconix

Si5858DU

MOSFET TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Output Characteristics

On-Resistance vs. Drain Current and Gate Voltage

Gate Charge

0

4

8

12

16

20

0.0

0.5

1.0

1.5

2.0

2.5

3.0

VDS - Drain-to-Source Voltage (V)

VGS = 1 V

VGS = 1.5 V

VGS = 2.5 V

VGS = 2 V

VGS = 3 V thru 5 V

0.00

0.01

0.02

0.03

0.04

0.05

0.06

0.07

0.08

04

8

12

16

20

VGS = 2.5 V

ID - Drain Current (A)

VGS = 4.5 V

VGS = 1.8 V

0

2

4

6

8

0369

12

ID = 4.4 A

Qg - Total Gate Charge (nC)

VDS = 10 V

VDS = 16 V

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

0

2

4

6

8

10

0.0

0.3

0.6

0.9

1.2

1.5

25 °C

TC = 125 °C

- 55 °C

VGS - Gate-to-Source Voltage (V)

0

200

400

600

800

04

8

12

16

20

Crss

Coss

Ciss

VDS - Drain-to-Source Voltage (V)

0.6

0.8

1.0

1.2

1.4

1.6

- 50

- 25

0

25

50

75

100

125

150

VGS = 4.5 V

ID = 4.4 A

TJ - Junction Temperature (°C)

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