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FEP16GT Datasheet(PDF) 1 Page - Vishay Siliconix |
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FEP16GT Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 5 page FEP(F,B)16AT thru FEP(F,B)16JT Vishay General Semiconductor Document Number: 88596 Revision: 07-Nov-07 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 1 Dual Common-Cathode Ultrafast Plastic Rectifier FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • High forward surge capability • AEC Q101 qualified • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-220AB and ITO-220AB package) • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS For use in high frequency rectifier of switching mode power supplies, inverters, freewheeling diodes, dc-to-dc converters, and other power switching application. MECHANICAL DATA Case: TO-220AB, ITO-220AB, TO-263AB Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix for consumer grade, meets JESD 201 class 1A whisker test, HE3 suffix for high reliability grade (AEC Q101 qualified), meets JESD 201 class 2 whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum PRIMARY CHARACTERISTICS IF(AV) 8.0 A x 2 VRRM 50 V to 600 V IFSM 200 A, 125 A trr 35 ns, 50 ns VF 0.95 V, 1.30 V, 1.50 V TJ max. 150 °C CASE PIN 2 PIN 1 PIN 3 TO-220AB FEP16xT ITO-220AB FEPF16xT FEPB16xT PIN 1 PIN 2 K HEATSINK 1 2 3 1 2 K PIN 2 PIN 1 PIN 3 TO-263AB 1 2 3 MAXIMUM RATINGS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL FEP 16AT FEP 16BT FEP 16CT FEP 16DT FEP 16FT FEP 16GT FEP 16HT FEP 16JT UNIT Maximum repetitive peak reverse voltage VRRM 50 100 150 200 300 400 500 600 V Maximum RMS voltage VRMS 35 70 105 140 210 280 350 420 V Maximum DC blocking voltage VDC 50 100 150 200 300 400 500 600 V Maximum average forward rectified current at TC = 100 °C IF(AV) 16 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode IFSM 200 125 A Operating storage and temperature range TJ, TSTG - 55 to +150 °C Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min VAC 1500 V |
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