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BPW34S Datasheet(PDF) 2 Page - Vishay Siliconix |
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BPW34S Datasheet(HTML) 2 Page - Vishay Siliconix |
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2 / 5 page  Document Number: 81521 For technical questions, contact: detectortechsupport@vishay.com www.vishay.com Rev. 2.0, 08-Sep-08 387 BPW34, BPW34S Silicon PIN Photodiode, RoHS Compliant Vishay Semiconductors Note Tamb = 25 °C, unless otherwise specified BASIC CHARACTERISTICS Tamb = 25 °C, unless otherwise specified Fig. 1 - Reverse Dark Current vs. Ambient Temperature Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature BASIC CHARACTERISTICS PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Breakdown voltage IR = 100 µA, E = 0 V(BR) 60 V Reverse dark current VR = 10 V, E = 0 Iro 230 nA Diode capacitance VR = 0 V, f = 1 MHz, E = 0 CD 70 pF VR = 3 V, f = 1 MHz, E = 0 CD 25 40 pF Open circuit voltage Ee = 1 mW/cm2, λ = 950 nm Vo 350 mV Temperature coefficient of Vo Ee = 1 mW/cm2, λ = 950 nm TKVo - 2.6 mV/K Short circuit current EA = 1 klx Ik 70 µA Ee = 1 mW/cm2, λ = 950 nm Ik 47 µA Temperature coefficient of Ik Ee = 1 mW/cm2, λ = 950 nm TKIk 0.1 %/K Reverse light current EA = 1 klx, VR = 5 V Ira 75 µA Ee = 1 mW/cm2, λ = 950 nm, VR = 5 V Ira 40 50 µA Angle of half sensitivity ϕ ± 65 deg Wavelength of peak sensitivity λ p 900 nm Range of spectral bandwidth λ 0.1 430 to 1100 nm Noise equivalent power VR = 10 V, λ = 950 nm NEP 4 x 10-14 W/ √Hz Rise time VR = 10 V, RL = 1 kΩ, λ = 820 nm tr 100 ns Fall time VR = 10 V, RL = 1 kΩ, λ = 820 nm tf 100 ns 20 40 60 80 1 10 100 1000 100 94 8403 V R = 10 V T amb - Ambient Temperature (°C) 0.6 0.8 1.0 1.2 1.4 T amb - Ambient Temperature (°C) 94 8416 V R = 5 V λ = 950 nm 0 100 80 60 40 20 |
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