SI5433BDC-T1-E3 datasheet(3/6 Pages) VISHAY

Part #	SI5433BDC-T1-E3

Description	P-Channel 20-V (D-S) MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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Si5433BDC

Vishay Siliconix

New Product

Document Number: 73208

S-42241—Rev.A, 13-Dec-04

www.vishay.com

3

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

0

200

400

600

800

1000

1200

1400

1600

1800

04

8

12

16

20

0.6

0.8

1.0

1.2

1.4

1.6

−50

−25

0

25

50

75

100

125

150

0

1

2

3

4

5

0

3

6

9

12

15

18

0.00

0.02

0.04

0.06

0.08

0.10

0.12

04

8

12

16

20

VDS − Drain-to-Source Voltage (V)

Crss

Coss

Ciss

VDS = 10 V

ID = 4.8 A

ID − Drain Current (A)

VGS = 4.5 V

ID = 4.8 A

VGS = 1.8 V

VGS = 2.5 V

Gate Charge

On-Resistance vs. Drain Current

Qg − Total Gate Charge (nC)

Capacitance

On-Resistance vs. Junction Temperature

TJ − Junction Temperature (_C)

0.0

0.2

0.4

0.6

0.8

1.0

1.2

0.00

0.02

0.04

0.06

0.08

0.10

0.12

0

1234

5

TJ = 150_C

TJ = 25_C

ID = 4.8 A

20

10

1

Source-Drain Diode Forward Voltage

On-Resistance vs. Gate-to-Source Voltage

VSD − Source-to-Drain Voltage (V)

VGS − Gate-to-Source Voltage (V)

VGS = 4.5 V

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SI5433BDC-T1-E3 Datasheet(PDF) 3 Page - Vishay Siliconix

SI5433BDC-T1-E3 Datasheet(HTML) 3 Page - Vishay Siliconix

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