SI3805DV-T1-E3 datasheet(1/10 Pages) VISHAY

Part #	SI3805DV-T1-E3

Description	P-Channel 20-V (D-S) MOSFET with Schottky Diode

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Manufacturer	VISHAY [Vishay Siliconix]

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Vishay Siliconix

Si3805DV

New Product

Document Number: 68912

S-82297-Rev. A, 22-Sep-08

www.vishay.com

1

P-Channel 20-V (D-S) MOSFET with Schottky Diode

PRODUCT SUMMARY

VDS (V)

RDS(on) (Ω)

ID (A)

a

Qg (Typ.)

- 20

0.084 at VGS = - 10 V

- 3.3

4 nC

0.108 at VGS = - 4.5 V

- 2.9

0.175 at VGS = - 2.5 V

- 2.3

SCHOTTKY PRODUCT SUMMARY

VKA (V)

Vf (V)

Diode Forward Voltage

IF (A)

a

20

0.5 at 1 A

2

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

Drain-Source Voltage (MOSFET)

VDS

- 20

V

Reverse Voltage (Schottky)

VKA

20

Gate-Source Voltage (MOSFET)

VGS

± 12

Continuous Drain Current (TJ = 150 °C) (MOSFET)

TC = 25 °C

ID

- 3.3

A

TC = 70 °C

- 2.7

TA = 25 °C

- 3.0b, c

TA = 70 °C

- 2.4b, c

Pulsed Drain Current (MOSFET)

IDM

- 15

Continuous Source-Drain Diode Current

(MOSFET Diode Conduction)

TC = 25 °C

IS

- 1.2

TA = 25 °C

- 0.9b, c

Average Forward Current (Schottky)

IF

2b

Pulsed Forward Current (Schottky)

IFM

5

Maximum Power Dissipation (MOSFET)

TC = 25 °C

PD

1.4

W

TC = 70 °C

0.9

TA = 25 °C

1.1b, c

TA = 70 °C

0.7b, c

Maximum Power Dissipation (Schottky)

TC = 25 °C

1.4

TC = 70 °C

0.9

TA = 25 °C

1.1b, c

TA = 70 °C

0.7b, c

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

Marking Code

II

XXX

Lot Traceability

and Date Code

Part # Code

Ordering Information: Si3805DV-T1-E3 (Lead (Pb)-free)

TSOP-6

Top View

6

4

1

2

3

5

3 mm

2.85 mm

A

S

K

N/C

D

G

A

K

S

G

D

P-Channel MOSFET

RoHS

COMPLIANT

FEATURES

•

LITTLE FOOT® Plus Schottky Power MOSFET

APPLICATIONS

•

HDD

- DC-DC Converter

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