SI3495DV-T1-E3 datasheet(1/6 Pages) VISHAY

Part #	SI3495DV-T1-E3

Description	P-Channel 20-V (D-S), 1.5-V (G-S) MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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Vishay Siliconix

Si3495DV

New Product

Document Number: 73135

S-71321-Rev. B, 02-Jul-07

www.vishay.com

1

P-Channel 20-V (D-S), 1.5-V (G-S) MOSFET

FEATURES

•

TrenchFET® Power MOSFET: 1.5 V Rated

•

Ultra-Low On-Resistance

•

100 % Rg Tested

APPLICATIONS

•

Load Switch and PA Switch for Portable

Devices

PRODUCT SUMMARY

VDS (V)

rDS(on) (Ω)ID (A)

- 20

0.024 at VGS = - 4.5 V

- 7

0.030 at VGS = - 2.5 V

- 6.2

0.038 at VGS = - 1.8 V

- 5.2

0.048 at VGS = - 1.5 V

- 5.0

TSOP-6

Top V iew

6

4

1

2

3

5

2.85 mm

3 mm

Ordering Information: Si3495DV-T1-E3 (Lead (Pb)-free)

Marking Code:

95xxx

(4) S

(3) G

(1, 2, 5, 6) D

P-Channel MOSFET

Notes:

a. Surface Mounted on 1" x 1" FR4 Board.

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter

Symbol

5 sec

Steady State

Unit

Drain-Source Voltage

VDS

- 20

V

Gate-Source Voltage

VGS

± 5

Continuous Drain Current (TJ = 150 °C)

a

TA = 25 °C

ID

- 7

- 5.3

A

TA = 85 °C

- 3.6

- 3.9

Pulsed Drain Current

IDM

- 20

Continuous Source Current (Diode Conduction)a

IS

- 1.7

- 0.9

Maximum Power Dissipationa

TA = 25 °C

PD

2.0

1.1

W

TA = 85 °C

1.0

0.6

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambienta

t

≤ 5 sec

RthJA

45

62.5

°C/W

Steady State

90

110

Maximum Junction-to-Foot (Drain)

Steady State

RthJF

25

30

RoHS

COMPLIANT

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SI3495DV-T1-E3 Datasheet(PDF) 1 Page - Vishay Siliconix

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