SI3473CDV-T1-E3 datasheet(3/7 Pages) VISHAY

Part #	SI3473CDV-T1-E3

Description	P-Channel 12-V (D-S) MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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Document Number: 69947

S-80796-Rev. B, 14-Apr-08

www.vishay.com

3

Vishay Siliconix

Si3473CDV

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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Output Characteristics

On-Resistance vs. Drain Current and Gate Voltage

Gate Charge

0

4

8

12

16

20

0.0

0.5

1.0

1.5

2.0

2.5

3.0

VDS - Drain-to-Source Voltage (V)

VGS =5thru 2 V

VGS =1.5 V

VGS =1 V

0.010

0.015

0.020

0.025

0.030

0.035

0.040

04

8

12

16

20

ID - Drain Current (A)

VGS =2.5 V

VGS =4.5 V

VGS =1.8V

Qg - Total Gate Charge (nC)

0

2

4

6

8

0

5

10

15

20

25

30

35

40

45

VDS =9.6 V

VDS =6 V

ID = 8.1 A

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

0

4

8

12

16

20

0.0

0.3

0.6

0.9

1.2

1.5

1.8

VGS - Gate-to-Source Voltage (V)

TC = 125 °C

TC =25 °C

TC = - 55 °C

Crss

0

500

1000

1500

2000

2500

3000

3500

036

9

12

Ciss

VDS - Drain-to-Source Voltage (V)

Coss

0.7

0.8

0.9

1.0

1.1

1.2

1.3

1.4

1.5

- 50

- 25

0

25

50

75

100

125

150

TJ -Junction Temperature (°C)

VGS =4.5 V,2.5 V

ID = 8.1 A

VGS =1.8V

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SI3473CDV-T1-E3 Datasheet(PDF) 3 Page - Vishay Siliconix

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