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SI3459BDV-T1-E3 Datasheet(PDF) 4 Page - Vishay Siliconix |
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SI3459BDV-T1-E3 Datasheet(HTML) 4 Page - Vishay Siliconix |
4 / 7 page www.vishay.com 4 Document Number: 69954 S-80430-Rev. A, 03-Mar-08 Vishay Siliconix Si3459BDV New Product TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Source-Drain Diode Forward Voltage Threshold Voltage 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD -Source-to-Drain Voltage (V) 1 0.01 0.001 0.1 10 100 TJ = 25 °C TJ = 150 °C 1.6 1.8 2.0 2.2 2.4 2.6 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA TJ - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Single Pulse Power 0.15 0.25 0.35 0.45 3.0 4.5 6.0 7.5 9.0 VGS - Gate-to-Source Voltage (V) TJ = 25 °C TJ = 125 °C ID =2.2 A 0 5 10 15 20 25 30 Time (s) 10 1000 0.1 0.01 0.001 100 1 Safe Operating Area, Junction-to-Ambient VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which rDS(on) is specified 10 0.1 0.1 1 10 1 TA = 25 °C Single Pulse 1ms 10 ms 100 ms 0.01 1s, 10 s, DC BVDSS Limited 100 100 µs Limited byrDS(on)* |
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