Electronic Components Datasheet Search
  English  ▼
ALLDATASHEET.COM

X  

SI3437DV-T1-E3 Datasheet(PDF) 2 Page - Vishay Siliconix

Part # SI3437DV-T1-E3
Description  P-Channel 150-V (D-S) MOSFET
Download  7 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SI3437DV-T1-E3 Datasheet(HTML) 2 Page - Vishay Siliconix

  SI3437DV-T1-E3 Datasheet HTML 1Page - Vishay Siliconix SI3437DV-T1-E3 Datasheet HTML 2Page - Vishay Siliconix SI3437DV-T1-E3 Datasheet HTML 3Page - Vishay Siliconix SI3437DV-T1-E3 Datasheet HTML 4Page - Vishay Siliconix SI3437DV-T1-E3 Datasheet HTML 5Page - Vishay Siliconix SI3437DV-T1-E3 Datasheet HTML 6Page - Vishay Siliconix SI3437DV-T1-E3 Datasheet HTML 7Page - Vishay Siliconix  
Zoom Inzoom in Zoom Outzoom out
 2 / 7 page
background image
www.vishay.com
2
Document Number: 73899
S-62238–Rev. A, 06-Nov-06
Vishay Siliconix
Si3437DV
Notes:
a. Pulse test; pulse width
≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = - 250 µA
- 150
V
VDS Temperature Coefficient
ΔV
DS/TJ
ID = - 250 µA
- 160
mV/°C
VGS(th) Temperature Coefficient
ΔV
GS(th)/TJ
5.5
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = - 250 µA
- 2
- 4
V
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = - 150 V, VGS = 0 V
- 1
µA
VDS = - 150 V, VGS = 0 V, TJ = 55 °C
- 10
On-State Drain Currenta
ID(on)
VDS ≥ - 10 V, VGS = - 10 V
- 3
A
Drain-Source On-State Resistancea
rDS(on)
VGS = - 10 V, ID = - 1.4 A
0.61
0.75
Ω
VGS = - 6 V, ID = - 1 A
0.64
0.79
Forward Transconductancea
gfs
VDS = - 10 V, ID = - 1.4 A
4.5
S
Dynamicb
Input Capacitance
Ciss
VDS = - 50 V, VGS = 0 V, f = 1 MHz
510
pF
Output Capacitance
Coss
30
Reverse Transfer Capacitance
Crss
21
Total Gate Charge
Qg
VDS = - 75 V, VGS = - 10 V, ID = - 1 A
12.2
19
nC
VDS = - 75 V, VGS = - 6 V, ID = - 1 A
812
Gate-Source Charge
Qgs
2.1
Gate-Drain Charge
Qgd
3.9
Gate Resistance
Rg
f = 1 MHz
8.5
13
Ω
Turn-On Delay Time
td(on)
VDD = - 75 V, RL = 75 Ω
ID ≅ - 1 A, VGEN = - 10 V, Rg = 1 Ω
915
ns
Rise Time
tr
11
18
Turn-Off DelayTime
td(off)
28
42
Fall Time
tf
12
18
Turn-On Delay Time
td(on)
VDD = - 75 V, RL = 75 Ω
ID ≅ - 1 A, VGEN = - 6 V, Rg = 1 Ω
14
21
Rise Time
tr
29
44
Turn-Off DelayTime
td(off)
23
35
Fall Time
tf
14
21
Drain-Source Body Diode Characteristics
Continous Source-Drain Diode Current
IS
TC = 25 °C
- 1.4
A
Pulse Diode Forward Current
ISM
- 5
Body Diode Voltage
VSD
IS = - 1 A, VGS = 0 V
- 0.8
- 1.2
V
Body Diode Reverse Recovery Time
trr
IF = - 1.2 A, di/dt = 100 A/µs, TJ = 25 °C
60
90
ns
Body Diode Reverse Recovery Charge
Qrr
120
180
nC
Reverse Recovery Fall Time
ta
35
ns
Reverse Recovery Rise Time
tb
25


Similar Part No. - SI3437DV-T1-E3

ManufacturerPart #DatasheetDescription
logo
VBsemi Electronics Co.,...
SI3437DV-T1-GE3 VBSEMI-SI3437DV-T1-GE3 Datasheet
452Kb / 9P
   N-Channel 100 V (D-S) MOSFET
More results

Similar Description - SI3437DV-T1-E3

ManufacturerPart #DatasheetDescription
logo
Analog Power
AM10P15-550D ANALOGPOWER-AM10P15-550D Datasheet
322Kb / 5P
   P-Channel 150-V (D-S) MOSFET
logo
Vishay Siliconix
SI4409DY VISHAY-SI4409DY Datasheet
196Kb / 4P
   P-Channel 150-V (D-S) MOSFET
Rev. A, 16-Jul-07
SI7117DN-T1-GE3 VISHAY-SI7117DN-T1-GE3 Datasheet
561Kb / 13P
   P-Channel 150 V (D-S) MOSFET
Rev. C, 11-Apr-11
logo
Guangdong Kexin Industr...
KI2325DS KEXIN-KI2325DS Datasheet
52Kb / 2P
   P-Channel 150-V (D-S) MOSFET
logo
Vishay Siliconix
SI4455DY VISHAY-SI4455DY_V01 Datasheet
191Kb / 9P
   P-Channel 150-V (D-S) MOSFET
01-Jan-2022
SI7439DP VISHAY-SI7439DP_V01 Datasheet
375Kb / 12P
   P-Channel 150 V (D-S) MOSFET
01-Jan-2022
SI4455DY VISHAY-SI4455DY Datasheet
140Kb / 4P
   P-Channel 150-V (D-S) MOSFET
Rev. A, 18-Aug-08
SI2325DS VISHAY-SI2325DS Datasheet
89Kb / 6P
   P-Channel 150-V (D-S) MOSFET
S-42449-Rev. A, 10-Jan-05
logo
Analog Power
AM90P15-30P ANALOGPOWER-AM90P15-30P Datasheet
339Kb / 5P
   P-Channel 150-V (D-S) MOSFET
AM90P15-60P ANALOGPOWER-AM90P15-60P Datasheet
343Kb / 5P
   P-Channel 150-V (D-S) MOSFET
logo
Vishay Siliconix
SI3437DV VISHAY-SI3437DV_15 Datasheet
199Kb / 12P
   P-Channel 150-V (D-S) MOSFET
Rev. B, 04-May-09
More results


Html Pages

1 2 3 4 5 6 7


Datasheet Download

Go To PDF Page


Link URL




Privacy Policy
ALLDATASHEET.COM
Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Datasheet Upload   |   Contact us   |   Privacy Policy   |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com