SI2316BDS-T1-E3 datasheet(1/6 Pages) VISHAY

Part #	SI2316BDS-T1-E3

Description	N-Channel 30-V (D-S) MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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Vishay Siliconix

Si2316BDS

Document Number: 70445

S-71330-Rev. A, 02-Jul-07

www.vishay.com

1

New Product

N-Channel 30-V (D-S) MOSFET

FEATURES

• TrenchFET® Power MOSFET

•

PWM Optimized

•

100 % Rg tested

APPLICATIONS

•

Battery Switch

•

DC/DC Converter

PRODUCT SUMMARY

VDS (V)

rDS(on) (Ω)

ID (A)

a

Qg (Typ)

30

0.050 at VGS = 10 V

4.5

3.16 nC

0.080 at VGS = 4.5 V

3.4

Ordering Information: Si2316BDS-T1-E3 (Lead (Pb)-free)

G

S

D

Top View

2

3

TO-236

(SOT-23)

1

Si2316DS (M6)*

*Marking Code

Notes:

a. Based on TC = 25 °C.

b. Surface Mounted on 1" x 1" FR4 Board.

c. t = 5 sec.

d. Maximum under Steady State conditions is 130 °C/W.

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

30

V

Gate-Source Voltage

VGS

± 20

Continuous Drain Current (TJ = 150 °C)

TC = 25 °C

ID

4.5

A

TC = 70 °C

3.6

TA = 25 °C

3.9b, c

TA = 70 °C

3.13b, c

Pulsed Drain Current

IDM

20

Continuous Source-Drain Diode Current

TC = 25 °C

IS

1.39

TA = 25 °C

1.04b, c

Maximum Power Dissipation

TC = 25 °C

PD

1.66

W

TC = 70 °C

1.06

TA = 25 °C

1.25b, c

TA = 70 °C

0.8b, c

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambientb, d

≤ 5 sec

RthJA

80

100

°C/W

Maximum Junction-to-Foot (Drain)

Steady State

RthJF

60

75

RoHS

COMPLIANT

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SI2316BDS-T1-E3 Datasheet(PDF) 1 Page - Vishay Siliconix

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