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SI2301CDS-T1-E3 Datasheet(PDF) 4 Page - Vishay Siliconix

Part # SI2301CDS-T1-E3
Description  P-Channel 20-V (D-S) MOSFET
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SI2301CDS-T1-E3 Datasheet(HTML) 4 Page - Vishay Siliconix

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Document Number: 68741
S-81446-Rev. A, 23-Jun-08
Vishay Siliconix
Si2301CDS
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Source-Drain Diode Forward Voltage
Threshold Voltage
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1
VSD -Source-to-Drain Voltage (V)
0.1
10
TJ = - 50 °C
TJ = 150 °C
TJ = 25 °C
- 0.2
- 0.1
0.0
0.1
0.2
0.3
0.4
- 50
- 25
0
25
50
75
100
125
150
ID = 250 µA
TJ - Temperature (°C)
ID =1mA
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power
0.00
0.15
0.30
0.45
0.60
0
1
234
5
VGS - Gate-to-Source Voltage (V)
TJ =25 °C
TJ = 125 °C
ID =2.8 A
0
2
4
6
8
10
0.01
0.1
1
10
100
1000
Time (s)
TA = 25 °C
Safe Operating Area
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
10
0.1
0.1
1
10
1
TA =25 °C
Single Pulse
1ms
10 ms
100 ms
0.01
100 s, DC
BVDSS Limited
100
Limited byRDS(on)*
1s
10 s
100 µs


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