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SI1563EDH-T1-E3 Datasheet(PDF) 4 Page - Vishay Siliconix |
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SI1563EDH-T1-E3 Datasheet(HTML) 4 Page - Vishay Siliconix |
4 / 9 page www.vishay.com 4 Document Number: 71416 S-80257-Rev. C, 04-Feb-08 Vishay Siliconix Si1563EDH New Product N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Gate Charge Source-Drain Diode Forward Voltage Threshold Voltage 0 1 2 3 4 5 0.0 0.3 0.6 0.9 1.2 1.5 VDS = 10 V ID = 1.28 A Qg - Total Gate Charge (nC) 1.0 1.2 0.1 1 2 0 0.2 0.6 0.8 VSD -) V ( e g a t l o V n i a r D - o t - e c r u o S TJ = 25 °C TJ = 150 °C 0.4 - 0.4 - 0.3 - 0.2 - 0.1 0.0 0.1 0.2 - 50 - 25 0 25 50 75 100 125 150 ID = 100 µA TJ - Temperature (°C) On-Resistance vs. Junction Temperature On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient 0.6 0.8 1.0 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 150 VGS = 4.5 V ID = 1.13 A TJ - Junction Temperature (°C) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 01 2 3 45 ID = 1.13 A GS - Gate-to-Source Voltage (V) V 0 1 5 Time (s) 3 4 0 0 6 110 0.1 0.01 2 100 |
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