SI1071X-T1-GE3 datasheet(4/6 Pages) VISHAY

Part #	SI1071X-T1-GE3

Description	P-Channel 30-V (D-S) MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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Document Number: 74321

S-80641-Rev. B, 24-Mar-08

Vishay Siliconix

Si1071X

New Product

TYPICAL CHARACTERISTICS

TA = 25 °C, unless otherwise noted

Source-Drain Diode Forward Voltage

Threshold Voltage

0.01

0.1

1

10

VSD - Source-to-Drain Voltage (V)

0

0.2

0.4

0.6

0.8

1.0

1.2

TJ = 150 °C

TJ = 25 °C

0.5

0.6

0.7

0.8

0.9

1.0

1.1

1.2

1.3

- 50

- 25

0

25

50

75

100

125

150

TJ - Temperature (°C)

ID = 250 µA

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power

0.00

0.06

0.12

0.18

0.24

0.30

0.36

02

4

6

8

10

VGS - Gate-to-Source Voltage (V)

ID = 0.96 A

TA = 125 °C

TA = 25 °C

Time (s)

0.01

0.1

1

10

100

1000

0

1

2

3

4

5

Safe Operating Area, Junction-to-Ambient

DC

1 s

10 s

100 ms

10 ms

Limited by RDS(on)*

BVDSS Limited

T = 25 °C

Single Pulse

0.001

0.01

0.1

1

10

0.1

1

10

100

VDS - Drain-to-Source Voltage (V)

* VGS > minimum VGS at which RDS(on) is specified

A

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SI1071X-T1-GE3 Datasheet(PDF) 4 Page - Vishay Siliconix

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