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SI1054X Datasheet(PDF) 2 Page - Vishay Siliconix

Part No. SI1054X
Description  N-Channel 12-V (D-S) MOSFET
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Maker  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
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SI1054X Datasheet(HTML) 2 Page - Vishay Siliconix

   
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Document Number: 69579
S-80641-Rev. B, 24-Mar-08
Vishay Siliconix
Si1054X
New Product
Notes:
a. Pulse test; pulse width
≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 250 µA
12
V
VDS Temperature Coefficient
ΔV
DS/TJ
ID = 250 µA
12.23
mV/°C
VGS(th) Temperature Coefficient
ΔV
GS(th)/TJ
- 2.76
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
0.4
1
V
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 8 V
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 12 V, VGS = 0 V
1nA
VDS = 12 V, VGS = 0 V, TJ = 85 °C
10
µA
On-State Drain Currenta
ID(on)
VDS = ≥ 5 V, VGS = 4.5 V
6
A
Drain-Source On-State Resistancea
RDS(on)
VGS = 4.5 V, ID = 1.32 A
0.079
0.095
Ω
VGS = 2.5 V, ID = 1.26 A
0.087
0.104
VGS = 1.8 V, ID = 0.88 A
0.095
0.114
Forward Transconductance
gfs
VDS = 4.5 V, ID = 1.32 A
6.25
S
Dynamicb
Input Capacitance
Ciss
VDS = 6 V, VGS = 0 V, f = 1 MHz
480
pF
Output Capacitance
Coss
142
Reverse Transfer Capacitance
Crss
92
Total Gate Charge
Qg
VDS = 6 V, VGS = 5 V, ID = 1.32 A
5.71
8.57
nC
VDS = 6 V, VGS = 4.5 V, ID = 1.32 A
5.25
7.9
Gate-Source Charge
Qgs
0.83
Gate-Drain Charge
Qgd
1.54
Gate Resistance
Rg
f = 1 MHz
3.5
5.25
Ω
Turn-On Delay Time
td(on)
VDD = 6 V, RL = 5.71 Ω
ID ≅ 1.05 A, VGEN = 4.5 V, Rg = 1 Ω
5.5
8.25
ns
Rise Time
tr
13
19.5
Turn-Off Delay Time
td(off)
37
55.5
Fall Time
tf
14
21
Drain-Source Body Diode Characteristics
Pulse Diode Forward Currenta
ISM
6A
Body Diode Voltage
VSD
IS = 1.0 A
0.8
1.2
V
Body Diode Reverse Recovery Time
trr
IF = 1.0 A, di/dt = 100 A/µs
19.3
28.95
ns
Body Diode Reverse Recovery Charge
Qrr
5.8
8.7
nC
Reverse Recovery Fall Time
ta
7.4
ns
Reverse Recovery Rise Time
tb
11.9


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