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V60100C Datasheet(PDF) 1 Page - Vishay Siliconix

Part No. V60100C
Description  Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.36 V at IF = 5 A
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Maker  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
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V60100C Datasheet(HTML) 1 Page - Vishay Siliconix

   
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V60100C & VB60100C
Vishay General Semiconductor
Document Number: 88942
Revision: 19-May-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.36 V at IF = 5 A
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power
losses
• High efficiency operation
• Low thermal resistance
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
• Solder dip 260 °C, 40 s (for TO-220AB)
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency inverters, switching power
supplies, freewheeling diodes, OR-ing diode, dc-to-dc
converters and reverse battery protection.
MECHANICAL DATA
Case: TO-220AB and TO-263AB
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
PRIMARY CHARACTERISTICS
IF(AV)
2 x 30 A
VRRM
100 V
IFSM
320 A
VF at IF = 30 A
0.66 V
TJ max.
150 °C
TMBS
®
TO-220AB
V60100C
1
2
3
CASE
PIN 2
PIN 1
PIN 3
VB60100C
1
2
K
TO-263AB
PIN 1
PIN 2
K
HEATSINK
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V60100C
VB60100C
UNIT
Maximum repetitive peak reverse voltage
VRRM
100
V
Maximum average forward rectified current (Fig. 1)
per device
per diode
IF(AV)
60
30
A
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
per diode
IFSM
320
Operating junction and storage temperature range
TJ, TSTG
- 40 to + 150
°C


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