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IRLI540G Datasheet(PDF) 2 Page - Vishay Siliconix |
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IRLI540G Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 8 page www.vishay.com Document Number: 90399 2 S-Pending-Rev. A, 05-Jun-08 IRLI540G, SiHLI540G Vishay Siliconix Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %. THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT Maximum Junction-to-Ambient RthJA -65 °C/W Maximum Junction-to-Case (Drain) RthJC -3.1 SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 100 - - V VDS Temperature Coefficient ΔV DS/TJ Reference to 25 °C, ID = 1 mA - 0.12 - V/°C Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 1.0 - 2.0 V Gate-Source Leakage IGSS VGS = ± 10 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 100 V, VGS = 0 V - - 25 µA VDS = 80 V, VGS = 0 V, TJ = 150 °C - - 250 Drain-Source On-State Resistance RDS(on) VGS = 5 V ID = 10 Ab - - 0.077 Ω VGS = 4 V ID = 8.5 Ab - - 0.11 Forward Transconductance gfs VDS = 25 V, ID = 10 Ab 12 - - S Dynamic Input Capacitance Ciss VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 - 2200 - pF Output Capacitance Coss - 560 - Reverse Transfer Capacitance Crss - 140 - Drain to Sink Capacitance C f = 1.0 MHz - 12 - Total Gate Charge Qg VGS = 5 V ID = 28 A, VDS = 80 V, see fig. 6 and 13b -- 64 nC Gate-Source Charge Qgs -- 9.4 Gate-Drain Charge Qgd -- 27 Turn-On Delay Time td(on) VDD = 50 V, ID = 28 A, RG = 4.5 Ω, RD= 1.7 Ω, see fig. 10b -8.5 - ns Rise Time tr - 170 - Turn-Off Delay Time td(off) -35 - Fall Time tf -80 - Internal Drain Inductance LD Between lead, 6 mm (0.25") from package and center of die contact -4.5 - nH Internal Source Inductance LS -7.5 - Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS MOSFET symbol showing the integral reverse p - n junction diode -- 17 A Pulsed Diode Forward Currenta ISM -- 68 Body Diode Voltage VSD TJ = 25 °C, IS = 17 A, VGS = 0 Vb -- 2.5 V Body Diode Reverse Recovery Time trr TJ = 25 °C, IF = 28 A, dI/dt = 100 A/µsb - 130 260 ns Body Diode Reverse Recovery Charge Qrr -1.5 2.9 µC Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) D S G S D G |
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