Electronic Components Datasheet Search |
|
SIHFR9310TL-E3 Datasheet(PDF) 2 Page - Vishay Siliconix |
|
SIHFR9310TL-E3 Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 8 page www.vishay.com Document Number: 91284 2 S-81378-Rev. A, 07-Jul-08 IRFR9310, IRFU9310, SiHFR9310, SiHFU9310 Vishay Siliconix Note a. When mounted on 1" square PCB (FR-4 or G-10 material). Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %. c. This is applied for IPAK, LS of DPAK is measured between lead and center of die contact. THERMAL RESISTANCE RATINGS PARAMETER SYMBOL MIN. TYP. MAX. UNIT Maximum Junction-to-Ambient RthJA - - 110 °C/W Maximum Junction-to-Ambient (PCB Mount)a RthJA -- 50 Maximum Junction-to-Case (Drain) RthJC -- 2.5 SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 µA - 400 - - V VDS Temperature Coefficient ΔV DS/TJ Reference to 25 °C, ID = - 1 mA - - 0.41 - V/°C Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 2.0 - - 4.0 V Gate-Source Leakage IGSS VGS = ± 20 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = - 400 V, VGS = 0 V - - - 100 µA VDS = - 320 V, VGS = 0 V, TJ = 125 °C - - - 500 Drain-Source On-State Resistance RDS(on) VGS = - 10 V ID = - 1.1 Ab -- 7.0 Ω Forward Transconductance gfs VDS = - 50 V, ID = - 1.1 A 0.91 - - S Dynamic Input Capacitance Ciss VGS = 0 V, VDS = - 25 V, f = 1.0 MHz, see fig. 5 - 270 - pF Output Capacitance Coss -50 - Reverse Transfer Capacitance Crss -8.0 - Total Gate Charge Qg VGS = - 10 V ID = - 1.1 A, VDS = - 320 V, see fig. 6 and 13b -- 13 nC Gate-Source Charge Qgs -- 3.2 Gate-Drain Charge Qgd -- 5.0 Turn-On Delay Time td(on) VDD = - 200 V, ID = - 1.1 A, RG = 21 Ω, RD = 180 Ω, see fig. 10b -11 - ns Rise Time tr -10 - Turn-Off Delay Time td(off) -25 - Fall Time tf -24 - Internal Drain Inductance LD Between lead, 6 mm (0.25") from package and center of die contactc -4.5 - nH Internal Source Inductance LS -7.5 - Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS MOSFET symbol showing the integral reverse p - n junction diode -- - 1.9 A Pulsed Diode Forward Currenta ISM -- - 7.6 Body Diode Voltage VSD TJ = 25 °C, IS = - 1.1 A, VGS = 0 Vb -- - 4.0 V Body Diode Reverse Recovery Time trr TJ = 25 °C, IF = -1.1 A, dI/dt = 100 A/µsb - 170 260 ns Body Diode Reverse Recovery Charge Qrr - 640 960 nC Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) D S G S D G |
Similar Part No. - SIHFR9310TL-E3 |
|
Similar Description - SIHFR9310TL-E3 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.COM |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |