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MCT5210 Datasheet(PDF) 2 Page - Vishay Siliconix

Part No. MCT5210
Description  Optocoupler, Phototransistor Output, Low Input Current, With Base Connection
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Maker  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

MCT5210 Datasheet(HTML) 2 Page - Vishay Siliconix

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For technical questions, please contact: optocoupler.answers@vishay.com
Document Number: 83657
2
Rev. 1.5, 14-Jan-08
MCT5210/MCT5211
Vishay Semiconductors
Optocoupler, Phototransistor Output,
Low Input Current, With Base Connection
Note
Tamb = 25 °C, unless otherwise specified.
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied
at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for
extended periods of the time can adversely affect reliability.
Note
Tamb = 25 °C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
COUPLER
Isolation test voltage
VISO
5300
VRMS
Total package dissipation (LED and detector)
Ptot
260
mW
Derate linearly from 25 °C
3.5
mW/°C
Creepage distance
≥ 7mm
Clearance distance
≥ 7mm
Comparative tracking index
per DIN IEC 112/VDE 0303, part 1
CTI
175
Isolation resistance
VIO = 500 V, Tamb = 25 °C
RIO
≥ 1012
Ω
VIO = 500 V, Tamb = 100 °C
RIO
≥ 1011
Ω
Operating temperature
Tamp
- 55 to + 100
°C
Storage temperature
Tstg
- 55 to + 150
°C
ABSOLUTE MAXIMUM RATINGS
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
ELECTRICAL CHARACTERISTICS
PARAMETER
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
INPUT
Forward voltage
IF = 5.0 mA
VF
1.2
1.5
V
Reverse voltage
IR = 10 µA
VR
6.0
V
OUTPUT
DC forward current gain
VCE = 5.0 V, IC = 100 µA
hFE
100
200
Collector emitter breakdown
voltage
IC = 100 µA
BVCEO
30
V
Emitter collector breakdown
voltage
IE = 100 µA
BVECO
7.0
V
Collector base breakdown
voltage
IE = 10 µA
BVCBO
70
V
Collector emitter leakage
voltage
VCE = 10 V
ICEO
5.0
100
nA
COUPLER
Saturation voltage
IF = 3.0 mA, IC = 1.8 mA
MCT5210
VCEsat
0.25
0.4
V
IF = 1.6 mA, IC = 1.6 mA
MCT5211
VCEsat
0.25
0.4
V
CURRENT TRANSFER RATIO
PARAMETER
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
Current transfer ratio
(collector emitter saturated)
VCE = 0.4 V, IF = 3.0 mA
MCT5210
CTRCEsat
60
120
%
VCE = 0.4 V, IF = 1.6 mA
MCT5211
CTRCEsat
100
200
%
VCE = 0.4 V, IF = 1.0 mA
MCT5211
CTRCEsat
75
150
%
Current transfer ratio
VCE = 5.0 mA, IF = 3.0 mA
MCT5210
CTR
70
150
%
VCE = 5.0 mA, IF = 1.6 mA
MCT5211
CTR
150
300
%
VCE = 5.0 mA, IF = 1.0 mA
MCT5211
CTR
110
225
%
Current transfer ratio
(collector base)
VCE = 4.3 V, IF = 3.0 mA
MCT5210
CTRCB
0.2
0.4
%
VCE = 4.3 V, IF = 1.6 mA
MCT5211
CTRCB
0.3
0.6
%
VCE = 4.3 V, IF = 1.0 mA
MCT5211
CTRCB
0.25
0.5
%


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