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SIHFR9024-E3 Datasheet(PDF) 1 Page - Vishay Siliconix |
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SIHFR9024-E3 Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 8 page Document Number: 91278 www.vishay.com S-81377-Rev. A, 30-Jun-08 1 Power MOSFET IRFR9024, IRFU9024, SiHFR9024, SiHFU9024 Vishay Siliconix FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (IRFR9024/SiHFR9024) • Straight Lead (IRFU9024/SiHFU9024) • Available in Tape and Reel • P-Channel • Fast Switching • Lead (Pb)-free Available DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU/SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surcace mount applications. Note a. See device orientation. Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = - 25 V, starting TJ = 25 °C, L = 4.5 mH, RG = 25 Ω, IAS = - 8.8 A (see fig. 12). c. ISD ≤ - 11 A, dI/dt ≤ 140 A/µs, VDD ≤ VDS, TJ ≤ 150 °C. d. 1.6 mm from case. e. When mounted on 1" square PCB (FR-4 or G-10 material). PRODUCT SUMMARY VDS (V) - 60 RDS(on) (Ω)VGS = - 10 V 0.28 Qg (Max.) (nC) 19 Qgs (nC) 5.4 Qgd (nC) 11 Configuration Single S G D P-Channel MOSFET DPAK (TO-252) IPAK (TO-251) Available RoHS* COMPLIANT ORDERING INFORMATION Package DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) IPAK (TO-251) Lead (Pb)-free IRFR9024PbF IRFR9024TRPbFa IRFR9024TRLPbFa IRFR9024TRRPbFa IRFU9024PbF SiHFR9024-E3 SiHFR9024T-E3a SiHFR9024TL-E3a SiHFR9024TR-E3a SiHFU9024-E3 SnPb IRFR9024 IRFR9024TRa IRFR9024TRLa - IRFU9024 SiHFR9024 SiHFR9024Ta SiHFR9024TLa - SiHFU9024 ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS - 60 V Gate-Source Voltage VGS ± 20 Continuous Drain Current VGS at - 10 V TC = 25 °C ID - 8.8 A TC = 100 °C - 5.6 Pulsed Drain Currenta IDM - 35 Linear Derating Factor 0.33 W/°C Linear Derating Factor (PCB Mount)e 0.020 Single Pulse Avalanche Energyb EAS 300 mJ Repetitive Avalanche Currenta IAR - 8.8 A Repetitive Avalanche Energya EAR 5.0 mJ Maximum Power Dissipation TC = 25 °C PD 42 W Maximum Power Dissipation (PCB Mount)e TA = 25 °C 2.5 Peak Diode Recovery dV/dtc dV/dt - 4.5 V/ns Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 150 °C Soldering Recommendations (Peak Temperature) for 10 s 260d * Pb containing terminations are not RoHS compliant, exemptions may apply |
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