Document Number: 91266

www.vishay.com

S-Pending-Rev. A, 21-Jul-08

WORK-IN-PROGRESS

1

Power MOSFET

IRFR120, IRFU120, SiHFR120, SiHFU120

Vishay Siliconix

FEATURES

• Dynamic dV/dt Rating

• Repetitive Avalanche Rated

• Surface Mount (IRFR120/SiHFR120)

• Straight Lead (IRFU120/SiHFU120)

• Available in Tape and Reel

• Fast Switching

• Ease of Paralleling

• Lead (Pb)-free Available

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized

device

design,

low

on-resistance

and

cost-effectiveness.

The DPAK is designed for surface mounting using vapor

phase, infrared, or wave soldering techniques. The straight

lead version (IRFU/SiHFU series) is for through-hole

mounting applications. Power dissipation levels up to 1.5 W

are possible in typical surface mount applications.

Note

a. See device orientation.

PRODUCT SUMMARY

100

0.27

16

4.4

7.7

Configuration

Single

N-Channel MOSFET

G

D

S

DPAK

(TO-252)

IPAK

(TO-251)

Available

RoHS*

COMPLIANT

ORDERING INFORMATION

Package

DPAK (TO-252)

DPAK (TO-252)

DPAK (TO-252)

DPAK (TO-252)

IPAK (TO-251)

Lead (Pb)-free

IRFR120PbF

IRFU120PbF

SiHFR120-E3

SiHFU120-E3

SnPb

IRFR120

IRFU120

SiHFR120

SiHFU120

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

100

V

Gate-Source Voltage

± 20

Continuous Drain Current

7.7

A

4.9

31

Linear Derating Factor

0.33

W/°C

0.020

210

mJ

7.7

A

4.2

mJ

Maximum Power Dissipation

42

W

2.5

dV/dt

5.5

V/ns

* Pb containing terminations are not RoHS compliant, exemptions may apply