www.vishay.com

Document Number: 91266

2

S-Pending-Rev. A, 21-Jul-08

IRFR120, IRFU120, SiHFR120, SiHFU120

Vishay Siliconix

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

d. 1.6 mm from case.

e. When mounted on 1" square PCB (FR-4 or G-10 material).

Note

a. When mounted on 1" square PCB (FR-4 or G-10 material).

Operating Junction and Storage Temperature Range

- 55 to + 150

°C

Soldering Recommendations (Peak Temperature)

for 10 s

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

MIN.

TYP.

MAX.

UNIT

Maximum Junction-to-Ambient

-

-

110

°C/W

Maximum Junction-to-Ambient

--

50

Maximum Junction-to-Case (Drain)

--

3.0

PARAMETER

SYMBOL

LIMIT

UNIT

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static

Drain-Source Breakdown Voltage

100

-

-

V

ΔV

-

0.13

-

V/°C

Gate-Source Threshold Voltage

2.0

-

4.0

V

Gate-Source Leakage

-

-

± 100

nA

Zero Gate Voltage Drain Current

-

-

25

µA

-

-

250

Drain-Source On-State Resistance

-

-

0.27

Ω

Forward Transconductance

1.6

-

-

S

Dynamic

Input Capacitance

f = 1.0 MHz, see fig. 5

-

360

-

pF

Output Capacitance

-

150

-

Reverse Transfer Capacitance

-34

-

Total Gate Charge

--

16

nC

Gate-Source Charge

--

4.4

Gate-Drain Charge

--

7.7

Turn-On Delay Time

-6.8

-

ns

Rise Time

-27

-

Turn-Off Delay Time

-18

-

Fall Time

-17

-

Internal Drain Inductance

Between lead,

6 mm (0.25") from

package and center of

die contact

-4.5

-

nH

Internal Source Inductance

-7.5

-

D

S

G