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3LN04S Datasheet(PDF) 2 Page - Sanyo Semicon Device |
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3LN04S Datasheet(HTML) 2 Page - Sanyo Semicon Device |
2 / 4 page 3LN04S No. A1194-2/4 Continued from preceding page. Ratings Parameter Symbol Conditions min typ max Unit Turn-ON Delay Time td(on) See specified Test Circuit. 17.5 ns Rise Time tr See specified Test Circuit. 34.2 ns Turn-OFF Delay Time td(off) See specified Test Circuit. 104 ns Fall Time tf See specified Test Circuit. 55.5 ns Total Gate Charge Qg VDS=10V, VGS=4V, ID=350mA 0.87 nC Gate-to-Source Charge Qgs VDS=10V, VGS=4V, ID=350mA 0.39 nC Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=4V, ID=350mA 0.14 nC Diode Forward Voltage VSD IS=350mA, VGS=0V 0.86 1.2 V Package Dimensions Switching Time Test Circuit unit : mm (typ) 7027-004 3 1 2 1.6 0.8 0.4 0.4 0.1 MIN 1 : Gate 2 : Source 3 : Drain SANYO : SMCP PW=10μs D.C.≤1% P.G 50Ω G S D ID=200mA RL=75Ω VDD=15V VOUT 3LN04S VIN 4V 0V VIN Rg Rg=1.2kΩ ID -- VDS ID -- VGS Drain-to-Source Voltage, VDS -- V Gate-to-Source Voltage, VGS -- V RDS(on) -- VGS RDS(on) -- Ta Gate-to-Source Voltage, VGS -- V Ambient Temperature, Ta -- °C IT11711 IT11712 IT11709 IT11710 1 0 1.0 0 0.5 0 0 0 0.2 0.4 0.6 0.8 1.0 0 150 100 50 350 300 250 200 2.0V 100 80 60 40 20 200 180 160 140 120 1.0 1.5 2.0 2.5 VDS=10V 23 4 5 6 7 8 1.5 2.5 3.0 3.5 0.5 2.0 4.0 1.0 0 1.5 2.5 3.0 0.5 2.0 Ta=25 °C 10mA 100mA ID=200mA --40 --60 --20 0 20 40 60 80 100 120 160 140 VGS =2.5V , ID=100mA VGS =1.5V , ID=10mA VGS=4.0V , ID= 200mA VGS=1.5V |
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