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3LN04S Datasheet(PDF) 2 Page - Sanyo Semicon Device

Part # 3LN04S
Description  N-Channel Silicon MOSFET General-Purpose Switching Device Applications
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Manufacturer  SANYO [Sanyo Semicon Device]
Direct Link  https://www.sanyo-av.com/us/
Logo SANYO - Sanyo Semicon Device

3LN04S Datasheet(HTML) 2 Page - Sanyo Semicon Device

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3LN04S
No. A1194-2/4
Continued from preceding page.
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Turn-ON Delay Time
td(on)
See specified Test Circuit.
17.5
ns
Rise Time
tr
See specified Test Circuit.
34.2
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit.
104
ns
Fall Time
tf
See specified Test Circuit.
55.5
ns
Total Gate Charge
Qg
VDS=10V, VGS=4V, ID=350mA
0.87
nC
Gate-to-Source Charge
Qgs
VDS=10V, VGS=4V, ID=350mA
0.39
nC
Gate-to-Drain “Miller” Charge
Qgd
VDS=10V, VGS=4V, ID=350mA
0.14
nC
Diode Forward Voltage
VSD
IS=350mA, VGS=0V
0.86
1.2
V
Package Dimensions
Switching Time Test Circuit
unit : mm (typ)
7027-004
3
1
2
1.6
0.8
0.4
0.4
0.1 MIN
1 : Gate
2 : Source
3 : Drain
SANYO : SMCP
PW=10μs
D.C.≤1%
P.G
50Ω
G
S
D
ID=200mA
RL=75Ω
VDD=15V
VOUT
3LN04S
VIN
4V
0V
VIN
Rg
Rg=1.2kΩ
ID -- VDS
ID -- VGS
Drain-to-Source Voltage, VDS -- V
Gate-to-Source Voltage, VGS -- V
RDS(on) -- VGS
RDS(on) -- Ta
Gate-to-Source Voltage, VGS -- V
Ambient Temperature, Ta --
°C
IT11711
IT11712
IT11709
IT11710
1
0
1.0
0
0.5
0
0
0
0.2
0.4
0.6
0.8
1.0
0
150
100
50
350
300
250
200
2.0V
100
80
60
40
20
200
180
160
140
120
1.0
1.5
2.0
2.5
VDS=10V
23
4
5
6
7
8
1.5
2.5
3.0
3.5
0.5
2.0
4.0
1.0
0
1.5
2.5
3.0
0.5
2.0
Ta=25
°C
10mA
100mA
ID=200mA
--40
--60
--20
0
20
40
60
80
100
120
160
140
VGS
=2.5V
, ID=100mA
VGS
=1.5V
, ID=10mA
VGS=4.0V
, ID=
200mA
VGS=1.5V


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