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SIHFP460A-E3 Datasheet(PDF) 4 Page - Vishay Siliconix |
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SIHFP460A-E3 Datasheet(HTML) 4 Page - Vishay Siliconix |
4 / 8 page www.vishay.com Document Number: 91234 4 S-81360-Rev. A, 28-Jul-08 IRFP460A, SiHFP460A Vishay Siliconix Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 8 - Maximum Safe Operating Area VDS, Drain-to-Source Voltage (V) C iss C rss C oss V GS = 0 V, f = 1 MHz C iss = Cgs + Cgd, Cds Shorted C rss = Cgd C oss = Cds + Cgd 91234_05 102 103 1 10 102 10 1 105 104 103 QG, Total Gate Charge (nC) 20 16 12 8 0 4 0 20 100 80 60 40 I D = 20 A V DS = 100 V V DS = 250 V For test circuit see figure 13 V DS = 400 V 91234_06 102 VSD, Source-to-Drain Voltage (V) 0.2 1.0 0.8 0.6 0.4 25 °C 150 °C V GS = 0 V 91234_07 10 1 0.1 1.2 1.4 1.6 10 µs 100 µs 1 ms 10 ms Operation in this area limited by R DS(on) VDS, Drain-to-Source Voltage (V) T C = 25 °C T J = 150 °C Single Pulse 1 103 10 10 102 102 103 104 91234_08 |
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