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IRFP450LC Datasheet(PDF) 2 Page - Vishay Siliconix

Part # IRFP450LC
Description  Power MOSFET
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

IRFP450LC Datasheet(HTML) 2 Page - Vishay Siliconix

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Document Number: 91231
2
S-81271-Rev. A, 16-Jun-08
IRFP450LC, SiHFP450LC
Vishay Siliconix
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width
≤ 300 µs; duty cycle ≤ 2 %.
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
UNIT
Maximum Junction-to-Ambient
RthJA
-40
°C/W
Case-to-Sink, Flat, Greased Surface
RthCS
0.24
-
Maximum Junction-to-Case (Drain)
RthJC
-0.65
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 250 µA
500
-
-
V
VDS Temperature Coefficient
ΔV
DS/TJ
Reference to 25 °C, ID = 1 mA
-
0.59
-
V/°C
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
2.0
-
4.0
V
Gate-Source Leakage
IGSS
VGS = ± 20 V
-
-
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 500 V, VGS = 0 V
-
-
25
µA
VDS = 400 V, VGS = 0 V, TJ = 125 °C
-
-
250
Drain-Source On-State Resistance
RDS(on)
VGS = 10 V
ID = 8.4 Ab
--
0.40
Ω
Forward Transconductance
gfs
VDS = 50 V, ID = 8.4 Ab
8.7
-
-
S
Dynamic
Input Capacitance
Ciss
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
-
2200
-
pF
Output Capacitance
Coss
-
320
-
Reverse Transfer Capacitance
Crss
-28
-
Total Gate Charge
Qg
VGS = 10 V
ID = 14 A, VDS = 400 V,
see fig. 6 and 13b
--
74
nC
Gate-Source Charge
Qgs
--
19
Gate-Drain Charge
Qgd
--
35
Turn-On Delay Time
td(on)
VDD = 250 V, ID = 14 A,
RG = 6.2 Ω, RD = 17 Ω, see fig. 10b
-14
-
ns
Rise Time
tr
-49
-
Turn-Off Delay Time
td(off)
-30
-
Fall Time
tf
-30
-
Internal Drain Inductance
LD
Between lead,
6 mm (0.25") from
package and center of
die contact
-5.0
-
nH
Internal Source Inductance
LS
-13
-
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
integral reverse
p - n junction diode
--
14
A
Pulsed Diode Forward Currenta
ISM
--
56
Body Diode Voltage
VSD
TJ = 25 °C, IS = 14 A, VGS = 0 Vb
--
1.4
V
Body Diode Reverse Recovery Time
trr
TJ = 25 °C, IF = 14 A, dI/dt = 100 A/µsb
-
580
870
ns
Body Diode Reverse Recovery Charge
Qrr
-5.1
7.7
µC
Forward Turn-On Time
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
D
S
G
S
D
G


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