Document Number: 91227

www.vishay.com

S-Pending-Rev. A, 24-Jun-08

WORK-IN-PROGRESS

1

Power MOSFET

IRFP360LC, SiHFP360LC

Vishay Siliconix

FEATURES

• Ultra Low Gate Charge

• Reduced Gate Drive Requirement

• Isolated Central Mounting Hole

• Dynamic dV/dt Rated

• Repetitive Avalanche Rated

• Lead (Pb)-free Available

DESCRIPTION

This new series of low charge Power MOSFETs achieve

significantly lower gate charge over convertional MOSFETs.

Utilizing

advanced

MOSFETs

technology

the

device

improvements allow for reduced gate drive requirements,

faster switching speeds and increased total system savings.

These device improvements combined with the proven

ruggedness and reliability of MOSFETs offer the designer a

new standard in power transistors for switching applications.

The TO-247 package is preferred for commercial-industrial

applications where higher power levels preclude the use of

TO-220 devices. The TO-247 is similar but superior to the

earlier TO-218 package because of its isolated mounting

hole.

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

d. 1.6 mm from case.

PRODUCT SUMMARY

400

0.20

110

28

45

Configuration

Single

N-Channel MOSFET

G

D

S

TO-247

G

D

S

Available

RoHS*

COMPLIANT

ORDERING INFORMATION

Package

TO-247

Lead (Pb)-free

IRFP360LCPbF

SiHFP360LC-E3

SnPb

IRFP360LC

SiHFP360LC

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

400

V

Gate-Source Voltage

± 30

Continuous Drain Current

23

A

14

91

Linear Derating Factor

2.2

W/°C

1200

mJ

23

A

28

mJ

Maximum Power Dissipation

280

W

dV/dt

4.0

V/ns

Operating Junction and Storage Temperature Range

- 55 to + 150

°C

Soldering Recommendations (Peak Temperature)

for 10 s

Mounting Torque

6-32 or M3 screw

10

lbf · in

1.1

N · m

* Pb containing terminations are not RoHS compliant, exemptions may apply