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SIHFL210T-E3 Datasheet(PDF) 1 Page - Vishay Siliconix |
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SIHFL210T-E3 Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 8 page Document Number: 91196 www.vishay.com S-81369-Rev. A, 07-Jul-08 1 Power MOSFET IRFL9110, SiHFL9110 Vishay Siliconix FEATURES • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • P-Channel • Fast Switching • Ease of Paralleling • Lead (Pb)-free Available DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-223 package is designed for surface-mount using vapor phase, infrared, or wave soldering techniques. Its unique package design allows for easy automatic pick-and-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of greater than 1.25 W is possible in a typical surface mount application. Note a. See device orientation. Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = - 25 V, starting TJ = 25 °C, L = 7.7 mH, RG = 25 Ω, IAS = - 4.4 A (see fig. 12). c. ISD ≤ - 4.4 A, dI/dt ≤ - 75 A/µs, VDD ≤ VDS, TJ ≤ 150 °C. d. 1.6 mm from case. e. When mounted on 1" square PCB (FR-4 or G-10 material). PRODUCT SUMMARY VDS (V) - 100 RDS(on) (Ω)VGS = - 10 V 1.2 Qg (Max.) (nC) 8.7 Qgs (nC) 2.2 Qgd (nC) 4.1 Configuration Single S G D P-Channel MOSFET SOT-223 Available RoHS* COMPLIANT ORDERING INFORMATION Package SOT-223 SOT-223 Lead (Pb)-free IRFL9110PbF IRFL9110TRPbFa SiHFL9110-E3 SiHFL210T-E3a SnPb IRFL9110 IRFL9110TRa SiHFL9110 SiHFL9110Ta ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS - 100 V Gate-Source Voltage VGS ± 20 Continuous Drain Current VGS at - 10 V TC = 25 °C ID - 1.1 A TC = 100 °C - 0.69 Pulsed Drain Currenta IDM - 8.8 Linear Derating Factor 0.025 W/°C Linear Derating Factor (PCB Mount)e 0.017 Single Pulse Avalanche Energyb EAS 100 mJ Avalanche Currenta IAR - 1.1 A Peak Diode Recovery dV/dtc EAR 0.31 mJ Maximum Power Dissipation TC = 25 °C PD 3.1 W Maximum Power Dissipation (PCB Mount)e TA = 25 °C 2.0 Peak Diode Recovery dV/dtc dV/dt - 5.5 V/ns Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 150 °C Soldering Recommendations (Peak Temperature) for 10 s 300d * Pb containing terminations are not RoHS compliant, exemptions may apply |
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