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IRFL9110TRPBF Datasheet(PDF) 7 Page - Vishay Siliconix |
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IRFL9110TRPBF Datasheet(HTML) 7 Page - Vishay Siliconix |
7 / 8 page Document Number: 91196 www.vishay.com S-81369-Rev. A, 07-Jul-08 7 IRFL9110, SiHFL9110 Vishay Siliconix Fig. 14 - For P-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?91196. P.W. Period dI/dt Diode recovery dV/dt Ripple ≤ 5 % Body diode forward drop Re-applied voltage Reverse recovery current Body diode forward current VGS = - 10 V* VDD ISD Driver gate drive D.U.T. ISD waveform D.U.T. VDS waveform Inductor current D = P.W. Period + - - + * V GS = - 5 V for logic level and - 3 V drive devices Peak Diode Recovery dV/dt Test Circuit VDD • dV/dt controlled by R G • ISD controlled by duty factor "D" • D.U.T. - device under test D.U.T. Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer RG Compliment N-Channel of D.U.T. for driver |
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