www.vishay.com

Document Number: 91195

2

S-81412-Rev. A, 07-Jul-08

IRFL9014, SiHFL9014

Vishay Siliconix

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

d. 1.6 mm from case.

e. When mounted on 1" square PCB (FR-4 or G-10 material).

Note

a. When mounted on 1" square PCB (FR-4 or G-10 material).

Maximum Power Dissipation

3.1

W

2.0

dV/dt

- 4.5

V/ns

Operating Junction and Storage Temperature Range

- 55 to + 150

°C

Soldering Recommendations (Peak Temperature)

for 10 s

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

TYP.

MAX.

UNIT

Maximum Junction-to-Ambient

-60

°C/W

Maximum Junction-to-Case (Drain)

-40

PARAMETER

SYMBOL

LIMIT

UNIT

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static

Drain-Source Breakdown Voltage

- 60

-

-

V

ΔV

-

- 0.059

-

V/°C

Gate-Source Threshold Voltage

- 2.0

-

- 4.0

V

Gate-Source Leakage

-

-

± 100

nA

Zero Gate Voltage Drain Current

-

-

- 100

µA

-

-

- 500

Drain-Source On-State Resistance

-

-

0.50

Ω

Forward Transconductance

1.3

-

-

S

Dynamic

Input Capacitance

f = 1.0 MHz, see fig. 5

-

270

-

pF

Output Capacitance

-

170

-

Reverse Transfer Capacitance

-31

-

Total Gate Charge

--

12

nC

Gate-Source Charge

--

3.8

Gate-Drain Charge

--

5.1

Turn-On Delay Time

-11

-

ns

Rise Time

-63

-

Turn-Off Delay Time

-9.6

-

Fall Time

-31

-

Internal Drain Inductance

Between lead,

6 mm (0.25") from

package and center of

die contact

-4.0

-

nH

Internal Source Inductance

-6.0

-

D

S

G