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SIHFIBC40G Datasheet(PDF) 1 Page - Vishay Siliconix |
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SIHFIBC40G Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 8 page Document Number: 91182 www.vishay.com S-81273-Rev. A, 16-Jun-08 1 Power MOSFET IRFIBC40G, SiHFIBC40G Vishay Siliconix FEATURES • Isolated Package • Low Thermal Resistance • Sink to Lead Creepage Dist. = 4.8 mm • High Voltage Isolation = 2.5 kVRMS (t = 60 s, f = 60 Hz) • Dynamic dV/dt Rating • Lead (Pb)-free Available DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications. The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single screw fixing. Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD= 50 V, starting TJ = 25 °C, L = 74 mH, RG = 25 Ω, IAS = 3.5 A (see fig. 12). c. ISD ≤ 6.2 A, dI/dt ≤ 80 A/µs, VDD ≤ VDS, TJ ≤ 150 °C. d. 1.6 mm from case. PRODUCT SUMMARY VDS (V) 600 RDS(on) (Ω)VGS = 10 V 1.2 Qg (Max.) (nC) 60 Qgs (nC) 8.3 Qgd (nC) 30 Configuration Single N-Channel MOSFET G D S S D G TO-220 FULLPAK Available RoHS* COMPLIANT ORDERING INFORMATION Package TO-220 FULLPAK Lead (Pb)-free IRFIBC40GPbF SiHFIBC40G-E3 SnPb IRFIBC40G SiHFIBC40G ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 600 V Gate-Source Voltage VGS ± 20 Continuous Drain Current VGS at 10 V TC = 25 °C ID 3.5 A TC = 100 °C 2.2 Pulsed Drain Currenta IDM 14 Linear Derating Factor 0.32 W/°C Single Pulse Avalanche Energyb EAS 500 mJ Repetitive Avalanche Currenta IAR 3.5 A Repetitive Avalanche Energya EAR 4.0 mJ Maximum Power Dissipation TC = 25 °C PD 40 W Peak Diode Recovery dV/dtc dV/dt 3.0 V/ns Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 150 °C Soldering Recommendations (Peak Temperature) for 10 s 300d Mounting Torque 6-32 or M3 screw 10 lbf · in 1.1 N · m * Pb containing terminations are not RoHS compliant, exemptions may apply |
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