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SIHFIBC40G Datasheet(PDF) 1 Page - Vishay Siliconix

Part # SIHFIBC40G
Description  Power MOSFET
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SIHFIBC40G Datasheet(HTML) 1 Page - Vishay Siliconix

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Document Number: 91182
www.vishay.com
S-81273-Rev. A, 16-Jun-08
1
Power MOSFET
IRFIBC40G, SiHFIBC40G
Vishay Siliconix
FEATURES
• Isolated Package
• Low Thermal Resistance
• Sink to Lead Creepage Dist. = 4.8 mm
• High Voltage Isolation = 2.5 kVRMS (t = 60 s,
f = 60 Hz)
• Dynamic dV/dt Rating
• Lead (Pb)-free Available
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
device
design,
low
on-resistance
and
cost-effectiveness.
The TO-220 FULLPAK eliminates the need for additional
insulating hardware in commercial-industrial applications.
The molding compound used provides a high isolation
capability and a low thermal resistance between the tab and
external heatsink. This isolation is equivalent to using a 100
micron mica barrier with standard TO-220 product. The
FULLPAK is mounted to a heatsink using a single clip or by
a single screw fixing.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD= 50 V, starting TJ = 25 °C, L = 74 mH, RG = 25 Ω, IAS = 3.5 A (see fig. 12).
c. ISD ≤ 6.2 A, dI/dt ≤ 80 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.
d. 1.6 mm from case.
PRODUCT SUMMARY
VDS (V)
600
RDS(on) (Ω)VGS = 10 V
1.2
Qg (Max.) (nC)
60
Qgs (nC)
8.3
Qgd (nC)
30
Configuration
Single
N-Channel MOSFET
G
D
S
S
D
G
TO-220 FULLPAK
Available
RoHS*
COMPLIANT
ORDERING INFORMATION
Package
TO-220 FULLPAK
Lead (Pb)-free
IRFIBC40GPbF
SiHFIBC40G-E3
SnPb
IRFIBC40G
SiHFIBC40G
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
VDS
600
V
Gate-Source Voltage
VGS
± 20
Continuous Drain Current
VGS at 10 V
TC = 25 °C
ID
3.5
A
TC = 100 °C
2.2
Pulsed Drain Currenta
IDM
14
Linear Derating Factor
0.32
W/°C
Single Pulse Avalanche Energyb
EAS
500
mJ
Repetitive Avalanche Currenta
IAR
3.5
A
Repetitive Avalanche Energya
EAR
4.0
mJ
Maximum Power Dissipation
TC = 25 °C
PD
40
W
Peak Diode Recovery dV/dtc
dV/dt
3.0
V/ns
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to + 150
°C
Soldering Recommendations (Peak Temperature)
for 10 s
300d
Mounting Torque
6-32 or M3 screw
10
lbf · in
1.1
N · m
* Pb containing terminations are not RoHS compliant, exemptions may apply


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