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ENA1215 Datasheet(PDF) 2 Page - Sanyo Semicon Device |
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ENA1215 Datasheet(HTML) 2 Page - Sanyo Semicon Device |
2 / 4 page EC4309C No. A1215-2/4 Continued from preceding page. Ratings Parameter Symbol Conditions min typ max Unit Turn-ON Delay Time td(on) See specified Test Circuit. 75 ns Rise Time tr See specified Test Circuit. 170 ns Turn-OFF Delay Time td(off) See specified Test Circuit. 550 ns Fall Time tf See specified Test Circuit. 350 ns Total Gate Charge Qg VDS=--10V, VGS=--4V, ID=--200mA 0.58 nC Gate-to-Source Charge Qgs VDS=--10V, VGS=--4V, ID=--200mA 0.17 nC Gate-to-Drain “Miller” Charge Qgd VDS=--10V, VGS=--4V, ID=--200mA 0.12 nC Diode Forward Voltage VSD IS=--200mA, VGS=0V --0.89 --1.2 V Package Dimensions Type No. Indication Electrical Connection unit : mm (typ) 7036-001 Switching Time Test Circuit 2 4 1 3 3 1 4 2 0.5 0.2 0.8 Top View Bottom View Polarity Discriminating Mark 1 : Gate 2 : Source 3 : Drain 4 : Drain SANYO : ECSP1008-4 PW=10μs D.C.≤1% P.G 50Ω G S D ID= --100mA RL=150Ω Rg VDD= --15V VOUT EC4309C VIN 0V --4V VIN Rg=5kΩ JB Top view Polarity mark (Top) Gate Source Source Gate Drain Drain *Electrodes : on the bottom Polarity mark (Top) Top view |
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