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ENA1215 Datasheet(PDF) 2 Page - Sanyo Semicon Device

Part # ENA1215
Description  P-Channel Silicon MOSFET General-Purpose Switching Device Applications
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Manufacturer  SANYO [Sanyo Semicon Device]
Direct Link  https://www.sanyo-av.com/us/
Logo SANYO - Sanyo Semicon Device

ENA1215 Datasheet(HTML) 2 Page - Sanyo Semicon Device

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EC4309C
No. A1215-2/4
Continued from preceding page.
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Turn-ON Delay Time
td(on)
See specified Test Circuit.
75
ns
Rise Time
tr
See specified Test Circuit.
170
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit.
550
ns
Fall Time
tf
See specified Test Circuit.
350
ns
Total Gate Charge
Qg
VDS=--10V, VGS=--4V, ID=--200mA
0.58
nC
Gate-to-Source Charge
Qgs
VDS=--10V, VGS=--4V, ID=--200mA
0.17
nC
Gate-to-Drain “Miller” Charge
Qgd
VDS=--10V, VGS=--4V, ID=--200mA
0.12
nC
Diode Forward Voltage
VSD
IS=--200mA, VGS=0V
--0.89
--1.2
V
Package Dimensions
Type No. Indication Electrical Connection
unit : mm (typ)
7036-001
Switching Time Test Circuit
2
4
1
3
3
1
4
2
0.5
0.2
0.8
Top View
Bottom View
Polarity Discriminating Mark
1 : Gate
2 : Source
3 : Drain
4 : Drain
SANYO : ECSP1008-4
PW=10μs
D.C.≤1%
P.G
50Ω
G
S
D
ID= --100mA
RL=150Ω
Rg
VDD= --15V
VOUT
EC4309C
VIN
0V
--4V
VIN
Rg=5kΩ
JB
Top view
Polarity mark (Top)
Gate
Source
Source
Gate
Drain
Drain
*Electrodes : on the bottom
Polarity mark (Top)
Top view


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