Document Number: 91177

www.vishay.com

S-Pending-Rev. A, 24-Jun-08

3

IRFIB7N50L, SiHFIB7N50L

Vishay Siliconix

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 12).

b. Pulse width

≤ 300 µs; duty cycle ≤ 2 %.

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Fig. 1 - Typical Output Characteristics

Fig. 2 - Typical Output Characteristics

Fig. 3 - Typical Transfer Characteristics

Fig. 4 - Normalized On-Resistance vs. Temperature

Drain-Source Body Diode Characteristics

Body Diode Reverse Recovery Current

-

5.9

8.9

A

Forward Turn-On Time

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

0.1

1

10

100

VDS, Drain-to-Source Voltage (V)

0.01

0.1

1

10

100

VGS

TOP

15V

10V

8.0V

7.0V

6.5V

6.0V

5.5V

BOTTOM

5.0V

≤60μs PULSE WIDTH

Tj = 25°C

5.0V

0.1

1

10

100

VDS, Drain-to-Source Voltage (V)

0.1

1

10

100

5.0V

≤60μs PULSE WIDTH

Tj = 150°C

VGS

TOP

15V

10V

8.0V

7.0V

6.5V

6.0V

5.5V

BOTTOM

5.0V

3

4

5

6

7

8

9

VGS, Gate-to-Source Voltage (V)

0.1

1

10

100

TJ = 25°C

TJ = 175°C

VDS = 50V

≤60μs PULSE WIDTH

-60 -40 -20

0

20

40

60

80 100 120 140 160

TJ , Junction Temperature (°C)

0.0

0.5

1.0

1.5

2.0

2.5

3.0

ID = 6.8A

VGS = 10V