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SIHFIB7N50L-E3 Datasheet(PDF) 2 Page - Vishay Siliconix |
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SIHFIB7N50L-E3 Datasheet(HTML) 2 Page - Vishay Siliconix |
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2 / 9 page  www.vishay.com Document Number: 91177 2 S-Pending-Rev. A, 24-Jun-08 IRFIB7N50L, SiHFIB7N50L Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT Maximum Junction-to-Ambient RthJA -65 °C/W Maximum Junction-to-Case (Drain) RthJC -2.69 SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 500 - - V VDS Temperature Coefficient ΔV DS/TJ Reference to 25 °C, ID = 1 mA - 0.44 - V/°C Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 3.0 - 5.0 V Gate-Source Leakage IGSS VGS = ± 30 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 500 V, VGS = 0 V - - 50 µA VDS = 400 V, VGS = 0 V, TJ = 125 °C - - 2.0 mA Drain-Source On-State Resistance RDS(on) VGS = 10 V ID = 4.1 Ab - 0.32 0.38 Ω Forward Transconductance gfs VDS = 50 V, ID = 4.1 A 4.7 - - S Dynamic Input Capacitance Ciss VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 - 2220 - pF Output Capacitance Coss - 230 - Reverse Transfer Capacitance Crss -23 - Output Capacitance Coss VGS = 0 V VDS = 1.0 V, f = 1.0 MHz - 2780 - VDS = 400 V, f = 1.0 MHz - 63 - Effective Output Capacitance Coss eff. VDS = 0 V to 400 Vc - 140 - Effective Output Capacitance (Energy Related) Coss eff. (ER) - 100 - Total Gate Charge Qg VGS = 10 V ID = 6.8 A, VDS = 400 V, see fig. 7 and 16b -- 92 nC Gate-Source Charge Qgs -- 24 Gate-Drain Charge Qgd -- 44 Internal Gate Resistance RG f = 1 MHz, open drain - 0.88 - Ω Turn-On Delay Time td(on) VGS = 10 V VDD = 250 V, ID = 6.8 A, RG = 9.0 Ω, see fig. 11a and 11bb -23 - ns Rise Time tr -36 - Turn-Off Delay Time td(off) -47 - Fall Time tf -19 - Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS MOSFET symbol showing the integral reverse p - n junction diode -- 6.8 A Pulsed Diode Forward Currenta ISM -- 27 Body Diode Voltage VSD TJ = 25 °C, IS = 6.8 A, VGS = 0 Vb -- 1.5 V Body Diode Reverse Recovery Time trr TJ = 25 °C, IF = 6.8 A, TJ = 125 °C, dI/dt = 100 A/µsb - 85 130 ns - 130 200 Body Diode Reverse Recovery Charge Qrr TJ = 25 °C, IS = 6.8 A, TJ = 125 °C, dI/dt = 100 A/µsb - 280 420 nC - 570 860 S D G |
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