Document Number: 90178

www.vishay.com

S-Pending-Rev. A, 16-Jun-08

WORK-IN-PROGRESS

1

Power MOSFET

IRFI510G, SiHFI510G

Vishay Siliconix

FEATURES

• Isolated Package

f = 60 Hz)

• Sink to Lead Creepage Distance = 4.8 mm

• 175 °C Operating Temperature

• Dynamic dV/dt Rating

• Low Thermal Resistance

• Lead (Pb)-free Available

DESCRIPTION

Third Generation Power MOSFETs from Vishay provides the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and cost

effectiveness.

The TO-220 FULLPAK eliminates the need for additional

insulating hardware in commercial-industrial applications.

The moulding compound used provides a high isolation

capability and a low thermal resistance between the tab and

external heatsink. This isolation is equivalent to using a 100

micron mica barrier with standard TO-220 product. The

FULLPAK is mounted to a heatsink using a single clip or by

a single screw fixing.

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

d. 1.6 mm from case.

PRODUCT SUMMARY

100

0.54

8.3

2.3

3.8

Configuration

Single

N-Channel MOSFET

G

D

S

S

D

G

TO-220 FULLPAK

Available

RoHS*

COMPLIANT

ORDERING INFORMATION

Package

TO-220 FULLPAK

Lead (Pb)-free

IRFI510GPbF

SiHFI510G-E3

SnPb

IRFI510G

SiHFI510G

PARAMETER

SYMBOL

LIMIT

UNIT

Gate-Source Voltage

± 20

V

Continuous Drain Current

4.5

A

3.2

18

Linear Derating Factor

0.18

W/°C

60

mJ

4.5

A

2.7

mJ

Maximum Power Dissipation

27

W

dV/dt

4.5

V/ns

Operating Junction and Storage Temperature Range

- 55 to + 175

°C

Soldering Recommendations (Peak Temperature)

for 10 s

Mounting Torque

6-32 or M3 screw

10

lbf · in

1.1

N · m

* Pb containing terminations are not RoHS compliant, exemptions may apply