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FH102A Datasheet(PDF) 2 Page - Sanyo Semicon Device |
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FH102A Datasheet(HTML) 2 Page - Sanyo Semicon Device |
2 / 6 page FH102A No. A1125-2/6 Continued from preceding page. Ratings Parameter Symbol Conditions min typ max Unit DC Current Gain Ratio hFE(small/large) VCE=5V, IC=20mA 0.7 0.95 Base-to-Emitter Voltage Diffrence VBE(largel-smal) VCE=5V, IC=20mA 1.0 mV Gain-Bandwidth Product fT VCE=5V, IC=20mA 5 7 GHz Output Capacitance Cob VCB=10V, f=1MHz 0.75 1.2 pF Reverse Transfer Capacitance Cre VCB=10V, f=1MHz 0.5 pF Forward Transfer Gain ⏐S21e⏐ 21VCE=5V, IC=20mA, f=1GHz 9 12 dB ⏐S21e⏐ 22VCE=2V, IC=3mA, f=1GHz 8 dB Noise Figure NF VCE=5V, IC=7mA, f=1GHz 1.0 1.8 dB Note) The specifications shown above are for each individual transistor except the hFE(small/large) and VBE (large-small) for which pair capability is also shown. Package Dimensions Electrical Connection unit : mm (typ) 7026-002 0.65 2.0 12 3 4 65 0.25 0.15 0.05 1 : Collector1 2 : Emitter1 3 : Collector2 4 : Emitter2 5 : Base2 6 : Base1 SANYO : MCP6 Collector Current, IC -- mA hFE -- IC Collector Current, IC -- mA f T -- IC 2 10 7 5 7 5 3 2 1.0 1.0 23 5 7 2 2 35 7 7 10 100 3 2 100 7 5 3 2 10 7 5 1.0 10 23 35 7 100 23 5 7 57 2 VCE=5V VCE=5V ITR10753 ITR10754 B1 B2 E2 C1 E1 C2 |
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