FH102A

No. A1125-2/6

Continued from preceding page.

Ratings

Parameter

Symbol

Conditions

min

typ

max

Unit

DC Current Gain Ratio

hFE(small/large) VCE=5V, IC=20mA

0.7

0.95

Base-to-Emitter Voltage Diffrence

VBE(largel-smal) VCE=5V, IC=20mA

1.0

mV

Gain-Bandwidth Product

fT

VCE=5V, IC=20mA

5

7

GHz

Output Capacitance

Cob

VCB=10V, f=1MHz

0.75

1.2

pF

Reverse Transfer Capacitance

Cre

VCB=10V, f=1MHz

0.5

pF

Forward Transfer Gain

⏐S21e⏐

9

12

dB

⏐S21e⏐

8

dB

Noise Figure

NF

VCE=5V, IC=7mA, f=1GHz

1.0

1.8

dB

Note) The specifications shown above are for each individual transistor except the hFE(small/large) and VBE (large-small) for which pair capability is

also shown.

Package Dimensions

Electrical Connection

unit : mm (typ)

7026-002

0.65

2.0

12

3

4

65

0.25

0.15

0.05

1 : Collector1

2 : Emitter1

3 : Collector2

4 : Emitter2

5 : Base2

6 : Base1

SANYO : MCP6

Collector Current, IC -- mA

hFE -- IC

Collector Current, IC -- mA

f T -- IC

2

10

7

5

7

5

3

2

1.0

1.0

23

5

7

2

2

35

7

7

10

100

3

2

100

7

5

3

2

10

7

5

1.0

10

23

35

7

100

23

5

7

57

2

VCE=5V

VCE=5V

ITR10753

ITR10754

B1

B2

E2

C1

E1

C2