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ENA1096 Datasheet(PDF) 2 Page - Sanyo Semicon Device |
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ENA1096 Datasheet(HTML) 2 Page - Sanyo Semicon Device |
2 / 4 page LB11669M No.A1096-2/4 Recommended Operating Conditions at Ta = 25 °C Parameter Symbol Conditions Ratings Unit Inflow current range IIN 5 to 25 mA Common-mode input voltage range VCOM 0.2 to VIN -2.3 V Electrical Characteristics at Ta = 25°C, VCC=24V, R1=1kΩ, unless otherwise specified. Ratings Parameter Symbol Conditions min typ max Unit VIN voltage VIN IIN = 6mA 5.95 6.3 6.65 V CT capacitor charging current ICT1 CT = 0.5V 1.8 2.55 3.4 μA CT capacitor dis-charging current ICT2 CT = 6.0V 0.15 0.23 0.31 μA capacitor charging / dis-charging current ratio RCT RCT = ICT1 / ICT2 10.5 11 14.5 CT charging voltage VCTH VCT / VIN 74 79 84 % CT dis-charging voltage VCTL VCT / VIN 41 46 51 % Output limit withstand voltage VOLM IO = 100mA 49 52 55 V Output saturation voltage VOL1 IO = 200mA 0.85 1.1 V Hall input sensitivity VHN Including offset and hysteresis ±15 ±30 mV FG/RD output saturation voltage VFG/RD IFG/RD = 5mA 0.15 0.3 V FG/RD output leak current IFGL/RDL VFG/RD = 14V 0.1 10 μA Thermal protection function operating temperature TSD Design target value * 180 °C * Design target value and is not measured. Package Dimensions unit : mm (typ) 3086B SANYO : MFP10S(225mil) 1 10 5 6 (0.5) 1.0 0.35 5.0 0.15 Pd max -- Ta Ambient temperature, Ta – °C 0 800 600 400 200 1000 – 30 – 20 80 85 60 20 40 0100 416 Specified board : 114.3 ×76.1×1.6mm3 glass epoxy |
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